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MBRM120LT1

Onsemi

MBRM120LT1 by Onsemi

MBRM120LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.26V and output current of 1A. It operates b/w -55°C to 125°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package style.

Median Price

$0.250

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 33,000 parts In-Stock

1+ parts

$0.250

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$0.250

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$0.240

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33,000

$0.250

$0.250

$0.240

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Distributors (In-Stock)

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Nova Conductors

Japan . 650 parts In-Stock

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$0.251

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650

$0.251

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Chip Stock

USA . 201,500 parts In-Stock

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Bristol Electronics

USA . 7,821 parts In-Stock

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NPI Materials, Inc.

USA . 7,479 parts In-Stock

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7,479

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Connector Distribution Corp

USA . 5,500 parts In-Stock

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Right Parts Inc.

USA . 5,500 parts In-Stock

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Atlantic Semiconductor

USA . 5,436 parts In-Stock

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Semi Source

USA . 3,501 parts In-Stock

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Sensible Micro Corp

USA . 3,204 parts In-Stock

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$0.224

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$0.207

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3,204

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$0.224

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Inland Empire Components Inc.

USA . 2,976 parts In-Stock

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Quantum Digital Technology

USA . 2,840 parts In-Stock

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J2 Sourcing AB

Sweden . 2,572 parts In-Stock

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QIE Inc.

USA . 2,538 parts In-Stock

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Vyrian

USA . 2,509 parts In-Stock

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J & M Industries LLC

USA . 2,400 parts In-Stock

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Speed Components Ltd

Israel . 2,247 parts In-Stock

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Sea View Technologies

USA . 1,675 parts In-Stock

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Flex Direct, LLC

USA . 1,580 parts In-Stock

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1,580

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Digiode

USA . 874 parts In-Stock

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874

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Prism Electronics

USA . 848 parts In-Stock

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848

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Electronics Depot

USA . 25 parts In-Stock

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LWI Electronics Inc

India . 5 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,041 parts In-Stock

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$0.129

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3,041

$0.129

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.169

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$0.154

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$0.139

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350

$0.169

$0.154

$0.139

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Ampacity Inc.

Singapore . 22,824 parts In-Stock

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$0.212

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Corohmni

South Africa . 222 parts In-Stock

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Continental Prestige Electronics

USA . 6,217 parts In-Stock

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Argo Parts USA

USA . 3,511 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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AZTECH Wire

Italy . 894 parts In-Stock

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Perfect Parts

USA . 32,101 parts In-Stock

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Problanco Electronics

Mexico . 7,786 parts In-Stock

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SupplyDigital Components

Austria . 7,187 parts In-Stock

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Kulean Microsystems

USA . 7,060 parts In-Stock

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TANS Electronics

Latvia . 6,589 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 4,533 parts In-Stock

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Kepictronics

USA . 4,200 parts In-Stock

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Corphita

USA . 2,479 parts In-Stock

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UHIMA Technologies

Türkiye . 900 parts In-Stock

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900

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Overview

Unleash the power of innovation with the MBRM120LT1 by Onsemi. As a leader in the field of diodes and rectifiers, Onsemi delivers unparalleled quality and reliability. This product is designed to meet the highest standards, ensuring optimal performance in a variety of applications. From its advanced technology to its robust design, the MBRM120LT1 offers customers value, efficiency, and peace of mind. Experience the difference with Onsemi and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the diode, ensuring longevity and reliability in various operating conditions.

Config: SINGLE

Simplifies the design and installation process as only one diode needs to be handled and connected.

Surface Mount: YES

Facilitates easy and efficient PCB assembly, saving time and effort in production.

Maximum Operating Temperature: 125 °C

Allows the diode to operate reliably at high temperatures, making it suitable for demanding applications.

Technology: SCHOTTKY

Provides fast switching speeds and low forward voltage drop, ideal for applications requiring high efficiency and minimal power loss.

Technical Specifications

Diodes & Rectifiers MBRM120LT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.26 V

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PDSO-G1

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRM120LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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