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MBRM120ET1

Onsemi

MBRM120ET1 by Onsemi

MBRM120ET1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.36V and output current of 1A. It operates at a max temperature of 150°C, making it suitable for applications requiring high-speed switching in compact electronic devices. The diode's small outline package and surface mount capability make it ideal for space-constrained designs.

Median Price

$0.162

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

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Farnell

UK . 615 parts In-Stock

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$0.153

615

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$0.153

Rochester

USA . 615 parts In-Stock

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$0.172

1k+ parts

$0.143

10k+ parts

$0.127

615

-

$0.172

$0.143

$0.127

Distributors (In-Stock)

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Digiode

USA . 1,824 parts In-Stock

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$0.134

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$0.134

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Chip Stock

USA . 248,700 parts In-Stock

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Bristol Electronics

USA . 9,000 parts In-Stock

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Dan-Mar Components

USA . 9,000 parts In-Stock

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Vyrian

USA . 7,722 parts In-Stock

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Electronic Expediters

USA . 2,694 parts In-Stock

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R&J Components

USA . 2,637 parts In-Stock

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Semi Source

USA . 2,426 parts In-Stock

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North Shore Components

USA . 2,421 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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LWI Electronics Inc

India . 280 parts In-Stock

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280

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Prism Electronics

USA . 12 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 659 parts In-Stock

1+ parts

$0.027

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659

$0.027

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Ampacity Inc.

Singapore . 14,819 parts In-Stock

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$0.102

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14,819

$0.102

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Semicontronic

India . 380 parts In-Stock

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$0.120

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$0.117

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$0.116

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380

$0.120

$0.117

$0.116

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Corphita

USA . 135 parts In-Stock

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$0.127

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Corohmni

South Africa . 315 parts In-Stock

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$0.141

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315

$0.141

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AZTECH Wire

Italy . 911 parts In-Stock

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$20.980

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911

$20.980

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Perfect Parts

USA . 24,405 parts In-Stock

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Continental Prestige Electronics

USA . 5,355 parts In-Stock

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Problanco Electronics

Mexico . 5,010 parts In-Stock

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Kulean Microsystems

USA . 4,275 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,800 parts In-Stock

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Kepictronics

USA . 2,600 parts In-Stock

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iodParts Technologies Inc.

India . 2,500 parts In-Stock

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Argo Parts USA

USA . 2,474 parts In-Stock

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SupplyDigital Components

Austria . 1,612 parts In-Stock

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UHIMA Technologies

Türkiye . 497 parts In-Stock

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TANS Electronics

Latvia . 404 parts In-Stock

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Bastille Electronics

Australia . 65 parts In-Stock

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Overview

Unlock a world of possibilities with the MBRM120ET1 by Onsemi. Crafted with precision and quality, this rectifier diode offers unparalleled performance and reliability in a compact package. Ideal for a variety of applications, this Schottky diode delivers a maximum output current of 1A and a maximum forward voltage of 0.36V, making it perfect for your electronic projects. Trust in Onsemi's expertise and innovation to bring you the best in diode technology. Elevate your designs with the MBRM120ET1 and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this diode highly durable and resistant to external factors, ensuring long-term reliability.

Config: SINGLE

The single configuration of this diode simplifies the circuit design and reduces complexity, making it easy to integrate into various applications.

Surface Mount: YES

The surface mount capability of this diode allows for easy and efficient PCB assembly, saving time and effort during the manufacturing process.

Package Shape: SQUARE

The square shape of the package provides efficient use of space on the PCB, making it ideal for compact electronic devices.

Package Style (Meter): SMALL OUTLINE

The small outline package style of this diode allows for high component density on the PCB, enabling compact and space-saving designs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this diode can withstand extreme temperature conditions, ensuring reliable performance in harsh environments.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides excellent solderability and conductivity, ensuring secure connections and optimal electrical performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in PCB layout and component placement, making it suitable for a variety of circuit configurations.

Case Connection: CATHODE

The cathode case connection simplifies the circuit design and ensures proper polarity during installation, reducing the risk of damage to the diode.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this diode can withstand high-temperature soldering processes without degradation, ensuring reliable assembly.

Peak Reflow Temperature °C: 235

The high peak reflow temperature of 235°C makes this diode suitable for lead-free soldering processes, complying with environmental regulations.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is designed for converting AC to DC, making it ideal for power supply and rectification applications.

Maximum Forward Voltage (VF): 0.36 V

The low forward voltage drop of 0.36V minimizes power loss and heat generation, improving efficiency in electronic circuits.

Maximum Output Current: 1 A

With a maximum output current of 1A, this diode can handle high current loads, making it suitable for power electronics and high-power applications.

Technology: SCHOTTKY

The Schottky technology used in this diode provides low forward voltage drop, fast switching speed, and low leakage current, enhancing overall performance.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering and inspection during the assembly process, ensuring reliable connections and quality control.

Maximum Repetitive Peak Reverse Voltage: 20 V

The high maximum repetitive peak reverse voltage of 20V provides robust protection against reverse voltage spikes and ensures reliable operation in demanding conditions.

Maximum Non Repetitive Peak Forward Current: 50 A

With a maximum non-repetitive peak forward current of 50A, this diode can handle high surge currents, making it suitable for transient voltage protection applications.

Diode Element Material: SILICON

The use of silicon as the diode element material provides high conductivity, low forward voltage drop, and excellent thermal stability, ensuring reliable performance and longevity.

Technical Specifications

Diodes & Rectifiers MBRM120ET1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.36 V

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PDSO-G1

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRM120ET1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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