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MBRB41H100CTT4G

Onsemi

MBRB41H100CTT4G by Onsemi

MBRB41H100CTT4G by Onsemi is a rectifier diode with 2 elements, common cathode config, and max output current of 20A. It operates at 175°C, has a peak reflow temp of 260°C, and is used for efficiency applications.

Median Price

$2.030

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 12,040 parts In-Stock

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$2.900

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$2.900

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$2.900

$2.900

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Avnet

USA . 4,000 parts In-Stock

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Rochester

USA . 3,449 parts In-Stock

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$1.160

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$0.960

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$0.855

3,449

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$1.160

$0.960

$0.855

Flip Electronics (Authorized)

USA . 800 parts In-Stock

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800

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Digiode

USA . 1,600 parts In-Stock

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$0.901

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1,600

$0.901

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Nova Conductors

Japan . 79 parts In-Stock

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$1.224

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79

$1.224

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Chip Stock

USA . 51,500 parts In-Stock

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Vyrian

USA . 5,498 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,200 parts In-Stock

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ComSIT USA

USA . 3,200 parts In-Stock

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Bristol Electronics

USA . 1,068 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,066 parts In-Stock

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Flip Electronics

USA . 800 parts In-Stock

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EPE Components Inc.

USA . 694 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 487 parts In-Stock

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Dan-Mar Components

USA . 391 parts In-Stock

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Executive Electronics, Inc.

USA . 270 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,110 parts In-Stock

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$0.060

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2,110

$0.060

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Modulus Dynamics

Lithuania . 5,239 parts In-Stock

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$0.150

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$0.150

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$0.150

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5,239

$0.150

$0.150

$0.150

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Benley Electronics

USA . 6 parts In-Stock

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$0.750

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6

$0.750

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Ampacity Inc.

Singapore . 5,082 parts In-Stock

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$0.810

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5,082

$0.810

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Semicontronic

India . 5,039 parts In-Stock

1+ parts

$0.810

100+ parts

$0.790

1k+ parts

$0.786

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5,039

$0.810

$0.790

$0.786

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Corphita

USA . 2,388 parts In-Stock

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$0.853

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$0.853

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Corohmni

South Africa . 147 parts In-Stock

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$0.948

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147

$0.948

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Decca Corp

Germany . 4,593 parts In-Stock

1+ parts

$0.990

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$0.970

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$0.960

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4,593

$0.990

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Argo Parts USA

USA . 3,987 parts In-Stock

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$1.140

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Continental Prestige Electronics

USA . 963 parts In-Stock

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$1.140

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$1.117

963

$1.140

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$1.117

Advanced Electronics

New Zealand . 200 parts In-Stock

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$1.322

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$1.217

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$1.140

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200

$1.322

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$1.140

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Microchip USA

USA . 434 parts In-Stock

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$7.943

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434

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RC Electronics

USA . 32,331 parts In-Stock

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Authorized Procurement Solutions

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Lixinc

USA . 17,512 parts In-Stock

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Kepictronics

USA . 15,000 parts In-Stock

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SupplyDigital Components

Austria . 7,164 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,999 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,967 parts In-Stock

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Kulean Microsystems

USA . 3,337 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$1.200

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$1.163

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$1.139

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$1.139

UHIMA Technologies

Türkiye . 794 parts In-Stock

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Problanco Electronics

Mexico . 543 parts In-Stock

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TANS Electronics

Latvia . 257 parts In-Stock

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ChipstoGo Electronic ltd

UK . 184 parts In-Stock

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GreenTree Electronics

Israel . 180 parts In-Stock

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Overview

Experience superior quality and performance with the MBRB41H100CTT4G diode by Onsemi. As a trusted manufacturer in the industry, Onsemi brings you a reliable and efficient solution for various applications. This common cathode diode offers a maximum output current of 20A and a maximum repetitive peak reverse voltage of 100V, making it ideal for high-efficiency systems. With its small outline package style and matte tin terminal finish, this diode provides unmatched value and benefits to customers looking for top-notch performance in their electronic designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy and efficient circuit integration with other components.

Surface Mount: YES

Saves space and allows for easy soldering onto PCBs.

Package Shape: RECTANGULAR

Makes it easy to place and secure the diodes in the circuit.

No. of Terminals: 2

Simplifies the connection process in the circuit.

Package Style (Meter): SMALL OUTLINE

Compact design suitable for space-constrained applications.

Application: EFFICIENCY

Designed for high efficiency applications.

Maximum Operating Temperature: 175 °C

Can operate in high-temperature environments without performance degradation.

Terminal Finish: MATTE TIN

Ensures good electrical conductivity and corrosion resistance.

Terminal Position: SINGLE

Simplifies the installation process.

Case Connection: CATHODE

Facilitates easy identification and connection in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand high reflow temperatures for a short duration.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures during manufacturing processes.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying electrical currents.

Maximum Forward Voltage (VF): 0.67 V

Low forward voltage drop for efficient energy conversion.

Maximum Output Current: 20 A

Suitable for high-current applications.

Terminal Form: GULL WING

Easy to mount on PCBs and provides strong mechanical support.

No. of Elements: 2

Dual elements for improved performance and redundancy.

Maximum Repetitive Peak Reverse Voltage: 100 V

Can handle high reverse voltages without breakdown.

Maximum Non Repetitive Peak Forward Current: 350 A

Capable of handling high peak currents for short durations.

Diode Element Material: SILICON

Durable and reliable material for diode construction.

Technical Specifications

Diodes & Rectifiers MBRB41H100CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.67 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

350 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRB41H100CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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