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MBRB30H60CT-1G

Onsemi

MBRB30H60CT-1G by Onsemi

MBRB30H60CT-1G by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 7.5A. It operates b/w -55 to 175 °C, ideal for efficiency applications requiring a max repetitive peak reverse voltage of 60V.

Median Price

$0.805

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 138,230 parts In-Stock

1+ parts

-

100+ parts

$0.776

1k+ parts

$0.644

10k+ parts

$0.574

138,230

-

$0.776

$0.644

$0.574

Verical

USA . 114,258 parts In-Stock

1+ parts

-

100+ parts

-

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$0.805

10k+ parts

$0.718

114,258

-

-

$0.805

$0.718

Chip1Stop

Japan . 1,000 parts In-Stock

1+ parts

-

100+ parts

$6.190

1k+ parts

$5.140

10k+ parts

-

1,000

-

$6.190

$5.140

-

Distributors (In-Stock)

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Digiode

USA . 755 parts In-Stock

1+ parts

$0.604

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-

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755

$0.604

-

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-

Component Electronics Inc.

Canada . 2,000 parts In-Stock

1+ parts

$0.770

100+ parts

$0.580

1k+ parts

$0.500

10k+ parts

-

2,000

$0.770

$0.580

$0.500

-

Vyrian

USA . 4,960 parts In-Stock

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4,960

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LIBRA Elektronik GmbH

Germany . 200 parts In-Stock

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200

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EMSNET

USA . 40 parts In-Stock

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40

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Distributors (Availability)

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Corohmni

South Africa . 247 parts In-Stock

1+ parts

$0.539

100+ parts

-

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247

$0.539

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Corphita

USA . 1,207 parts In-Stock

1+ parts

$0.572

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1,207

$0.572

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Component Stockers USA

USA . 100,855 parts In-Stock

1+ parts

$0.660

100+ parts

$0.620

1k+ parts

$0.560

10k+ parts

$0.560

100,855

$0.660

$0.620

$0.560

$0.560

Microchip USA

USA . 182 parts In-Stock

1+ parts

$3.965

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182

$3.965

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AZTECH Wire

Italy . 145 parts In-Stock

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$19.930

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145

$19.930

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Continental Prestige Electronics

USA . 143,462 parts In-Stock

1+ parts

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100+ parts

$0.495

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143,462

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$0.495

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TANS Electronics

Latvia . 7,810 parts In-Stock

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SupplyDigital Components

Austria . 7,524 parts In-Stock

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7,524

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Perfect Parts

USA . 5,329 parts In-Stock

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5,329

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Problanco Electronics

Mexico . 2,712 parts In-Stock

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2,712

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Kulean Microsystems

USA . 869 parts In-Stock

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869

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UHIMA Technologies

Türkiye . 627 parts In-Stock

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627

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Overview

Discover superior efficiency and performance with the MBRB30H60CT-1G by Onsemi. As a leading manufacturer in the industry of diodes and rectifiers, Onsemi delivers top-quality products that meet the highest standards. This common cathode diode boasts a Schottky technology with a maximum output current of 7.5A, making it ideal for various applications requiring high efficiency. With a maximum repetitive peak reverse voltage of 60V, this rectifier diode ensures reliable performance and long-lasting durability. Upgrade your electronics with the MBRB30H60CT-1G and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package ensures durability and protection for the diodes, making the product reliable for long-term use.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient and convenient circuit connectivity.

Package Shape: RECTANGULAR

Rectangular package shape provides easy mounting and installation in various electronic devices.

Maximum Operating Temperature: 175 °C

High maximum operating temperature of 175 °C ensures stable performance even under demanding conditions.

Technology: SCHOTTKY

Schottky diode technology offers low forward voltage drop and fast switching speeds, enhancing efficiency in the application.

Technical Specifications

Diodes & Rectifiers MBRB30H60CT-1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.56 V

JEDEC-95 Code:

TO-262AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

260 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

7.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

MBRB30H60CT-1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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