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MBRB3030CTG

Onsemi

MBRB3030CTG by Onsemi

MBRB3030CTG by Onsemi is a Schottky rectifier diode with 30V max repetitive peak reverse voltage and 15A max output current. It operates b/w -55 °C to 175°C, making it suitable for power applications. This common cathode diode comes in a small outline package with matte tin terminal finish for surface mount assembly.

Median Price

$7.296

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 80 parts In-Stock

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$7.296

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$3.429

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Vyrian

USA . 6,825 parts In-Stock

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Digiode

USA . 223 parts In-Stock

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Microfarads

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Ampacity Inc.

Singapore . 314 parts In-Stock

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$2.010

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314

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AZTECH Wire

Italy . 1,036 parts In-Stock

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$15.980

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Component Stockers USA

USA . 478 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 8,257 parts In-Stock

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TANS Electronics

Latvia . 6,065 parts In-Stock

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Kulean Microsystems

USA . 5,648 parts In-Stock

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Corphita

USA . 1,297 parts In-Stock

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SupplyDigital Components

Austria . 957 parts In-Stock

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UHIMA Technologies

Türkiye . 810 parts In-Stock

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Perfect Parts

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Corohmni

South Africa . 257 parts In-Stock

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Overview

Unlock unparalleled power with the MBRB3030CTG by Onsemi. As a leader in diodes & rectifiers, Onsemi delivers superior quality and reliability in every product. Ideal for power applications, this common cathode diode offers unmatched performance and efficiency. With a maximum output current of 15A and a maximum repetitive peak reverse voltage of 30V, this Schottky diode is designed to exceed expectations. Experience the value and benefits of Onsemi's MBRB3030CTG - your solution for cutting-edge power solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the diodes, ensuring reliability and durability.

Configuration: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy connection and management of multiple diodes. Having 2 elements increases functionality and versatility.

Surface Mount: YES

Surface mount capability makes installation and integration of the diodes easier and more convenient.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space and easy placement on circuit boards.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures stable performance even in demanding environments.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speeds, making the diodes efficient and effective for power applications.

Technical Specifications

Diodes & Rectifiers MBRB3030CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.47 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRB3030CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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