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MBRB2535CTLG

Onsemi

MBRB2535CTLG by Onsemi

MBRB2535CTLG by Onsemi is a Schottky rectifier diode with common cathode configuration. It has a max output current of 12.5A and a max repetitive peak reverse voltage of 35V, making it ideal for power applications. With a package style of small outline and gull wing terminal form, this diode operates b/w -65°C to 125°C temperature range.

Median Price

$1.450

Lifecycle Status

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14

In-Stock Inventory

1k+

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Rochester

USA . 774 parts In-Stock

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$1.450

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$1.420

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$1.390

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774

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Avnet

USA . 154 parts In-Stock

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Nova Conductors

Japan . 79 parts In-Stock

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TME

Poland . 35 parts In-Stock

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Vyrian

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Digiode

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Bristol Electronics

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ComSIT Distribution GmbH

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Chip Stock

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Inventory MP

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North Shore Components

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4 Star Electronics, Inc.

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Prism Electronics

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Speed Components Ltd

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Aztec Data Supply Inc.

USA . 223 parts In-Stock

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$0.165

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Ampacity Inc.

Singapore . 16 parts In-Stock

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$1.030

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$1.030

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Semicontronic

India . 16 parts In-Stock

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$1.030

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$1.004

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$0.999

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16

$1.030

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$0.999

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Corohmni

South Africa . 259 parts In-Stock

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$1.099

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Argo Parts USA

USA . 4,607 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Component Stockers USA

USA . 1 parts In-Stock

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$1.900

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AZTECH Wire

Italy . 662 parts In-Stock

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Kepictronics

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Problanco Electronics

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Kulean Microsystems

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SupplyDigital Components

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TANS Electronics

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Perfect Parts

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Corphita

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UHIMA Technologies

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Lixinc

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Authorized Procurement Solutions

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Computer Components Inc. - USA

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Continental Prestige Electronics

USA . 16 parts In-Stock

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$1.070

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Overview

Experience superior performance and reliability with the MBRB2535CTLG from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers for power applications. This common cathode diode features advanced Schottky technology, offering a maximum output current of 12.5A and a maximum repetitive peak reverse voltage of 35V. With a small outline package and dual terminals, this diode is ideal for various power applications. Trust Onsemi to provide you with high-value products that guarantee efficiency and durability for your projects. Choose the MBRB2535CTLG for unparalleled performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the diodes, ensuring longevity and reliability in various operating conditions.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easy circuit integration and efficient power distribution.

Surface Mount: YES

Surface mount capability enables easy and convenient installation on PCBs, saving space and facilitating automated manufacturing processes.

Package Shape: RECTANGULAR

Rectangular shape provides a compact design, ideal for applications where space is limited.

Application: POWER

Designed for power applications, this diode offers high output current and low forward voltage for efficient power handling.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without performance degradation.

Technology: SCHOTTKY

Schottky diode technology offers low forward voltage drop and fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Diodes & Rectifiers MBRB2535CTLG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.41 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

12.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

35 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRB2535CTLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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