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MBRB2515LG

Onsemi

MBRB2515LG by Onsemi

MBRB2515LG by Onsemi is a Schottky rectifier diode with a max output current of 25A and forward voltage of 0.45V. It is designed for power applications, featuring a max operating temperature of 100°C. This single-configured diode comes in a small outline package suitable for surface mount technology.

Median Price

$1.230

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 121 parts In-Stock

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-

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$1.230

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$1.100

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$1.030

121

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$1.230

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$1.030

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Nova Conductors

Japan . 500 parts In-Stock

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$0.895

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$0.895

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Digiode

USA . 2,161 parts In-Stock

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$1.292

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Component Electronics Inc.

Canada . 5 parts In-Stock

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$1.540

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$1.150

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$1.000

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5

$1.540

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Vyrian

USA . 5,232 parts In-Stock

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Flip Electronics

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First Choice Components Inc.

USA . 115 parts In-Stock

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Prism Electronics

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Bristol Electronics

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Benley Electronics

USA . 1 parts In-Stock

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$0.750

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1

$0.750

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Corohmni

South Africa . 97 parts In-Stock

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$0.877

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Continental Prestige Electronics

USA . 5,108 parts In-Stock

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$0.895

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$0.877

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$0.895

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Netroflash

USA . 1,000 parts In-Stock

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$0.895

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$0.877

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$0.895

$0.877

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Argo Parts USA

USA . 802 parts In-Stock

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$0.895

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$0.895

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Semicontronic

India . 121 parts In-Stock

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$1.160

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$1.131

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$1.125

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Corphita

USA . 1,757 parts In-Stock

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$1.224

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Ampacity Inc.

Singapore . 121 parts In-Stock

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$2.520

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AZTECH Wire

Italy . 476 parts In-Stock

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$7.796

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Microchip USA

USA . 370 parts In-Stock

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$9.170

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$9.110

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$9.080

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$9.050

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$9.050

Kepictronics

USA . 15,000 parts In-Stock

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TANS Electronics

Latvia . 6,571 parts In-Stock

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Kulean Microsystems

USA . 5,821 parts In-Stock

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Problanco Electronics

Mexico . 3,940 parts In-Stock

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SupplyDigital Components

Austria . 2,843 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 899 parts In-Stock

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Futuretech Components

Singapore . 550 parts In-Stock

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ChipstoGo Electronic ltd

UK . 45 parts In-Stock

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Overview

Discover the exceptional quality and reliability of the MBRB2515LG by Onsemi, a leading manufacturer in the industry. With applications in power systems, this SCHOTTKY RECTIFIER DIODE offers peak performance and efficiency. Its small outline package design with matte tin finish ensures easy installation and long-lasting durability. Experience the benefits of a low forward voltage of 0.45V and a maximum output current of 25A, providing superior power management for your projects. Upgrade to the MBRB2515LG and elevate your power solutions today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the body material provides durability and protection to the diode, making it a reliable choice for various applications.

Config: SINGLE

The single configuration simplifies the setup and installation process, making it user-friendly and easy to work with.

Surface Mount: YES

The surface mount option allows for easy and convenient mounting on circuit boards, saving space and offering a sleek design.

Package Shape: RECTANGULAR

The rectangular shape of the package provides stability and easy integration into electronic devices, ensuring a secure fit.

No. of Terminals: 2

With only two terminals, this diode is easy to connect and suitable for a wide range of power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers a compact design that is ideal for space-constrained environments.

Application: POWER

Designed for power applications, this diode is capable of handling high voltage and current levels efficiently.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature, this diode can withstand heat and operate reliably in various conditions.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals ensures good conductivity and longevity, enhancing the overall performance of the diode.

Terminal Position: SINGLE

The single terminal position simplifies the connection process, making it easy to install and use.

Case Connection: CATHODE

The cathode case connection design ensures proper polarity and functionality, enhancing the overall performance of the diode.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum time at peak reflow temperature allows for safe and effective soldering during installation.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this diode can withstand high-temperature soldering processes without damage.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is ideal for converting AC to DC, making it versatile for various electronic applications.

Maximum Forward Voltage (VF): 0.45 V

The low maximum forward voltage drop ensures minimal power loss and efficient operation of the diode.

Maximum Output Current: 25 A

With a maximum output current of 25 A, this diode can handle high power loads and is suitable for demanding applications.

Technology: SCHOTTKY

Using Schottky technology, this diode offers fast switching speeds and low power dissipation, making it an energy-efficient choice.

Terminal Form: GULL WING

The gull-wing terminal form allows for easy and secure soldering, ensuring a strong electrical connection for reliable performance.

Maximum Repetitive Peak Reverse Voltage: 15 V

With a maximum repetitive peak reverse voltage of 15 V, this diode provides reliable reverse blocking capabilities for added protection.

Maximum Non-Repetitive Peak Forward Current: 150 A

The high maximum non-repetitive peak forward current rating makes this diode suitable for surge protection and high-power applications.

Diode Element Material: SILICON

Constructed with silicon diode element material, this product offers high reliability and performance, making it a durable choice for various electronic applications.

Technical Specifications

Diodes & Rectifiers MBRB2515LG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.45 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Maximum Output Current:

25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRB2515LG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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