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LV8041FN

Onsemi

LV8041FN by Onsemi

LV8041FN by Onsemi is a Motion Control IC in a square chip carrier package. It operates at 5V with 52 terminals and BICMOS technology. With a temperature range of -20 to 85 °C, it's ideal for applications requiring precise motion control in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,390 parts In-Stock

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2,390

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Vyrian

USA . 1,025 parts In-Stock

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1,025

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Distributors (Availability)

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TANS Electronics

Latvia . 6,323 parts In-Stock

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6,323

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Kulean Microsystems

USA . 4,299 parts In-Stock

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4,299

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Corphita

USA . 2,197 parts In-Stock

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2,197

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SupplyDigital Components

Austria . 1,576 parts In-Stock

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Problanco Electronics

Mexico . 602 parts In-Stock

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602

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UHIMA Technologies

Türkiye . 228 parts In-Stock

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Corohmni

South Africa . 187 parts In-Stock

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Overview

Enhance your motion control applications with the LV8041FN by Onsemi. With a reputation for top-quality products, Onsemi delivers reliability and innovation in every component. This motion control IC offers superior performance and compatibility, making it the ideal choice for a wide range of applications. Experience seamless integration, improved efficiency, and enhanced functionality with the LV8041FN. Upgrade your projects and elevate your results with this cutting-edge solution from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and good thermal properties, making this product suitable for a wide range of operating conditions.

Surface Mount: YES

Being surface mountable allows for easy assembly onto circuit boards, saving space and reducing overall product size.

Nominal Supply Voltage (Vsup): 5 V

Operating at a standard 5V supply voltage ensures compatibility with many existing systems and simplifies power management.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this product can operate reliably in high-temperature environments without overheating.

Technology: BICMOS

The use of BICMOS technology combines the advantages of both bipolar and CMOS technologies, providing high performance and low power consumption.

Technical Specifications

Motion Control ICs LV8041FN attributes and parameters. Explore more Motion Control ICs devices from Onsemi

Specs

JESD-30 Code:

S-PQCC-N52

No. of Terminals:

52

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC52,.28SQ,16

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

Motion Control Electronics

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Trade Compliance

LV8041FN Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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