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LV8011V

Onsemi

LV8011V by Onsemi

LV8011V by Onsemi is a Motion Control IC with 20 terminals, operating at 5V. It features a max output current of 5A and BICMOS technology. Ideal for BRUSH DC MOTOR CONTROL applications due to its small outline package and low profile design.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,075 parts In-Stock

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Digiode

USA . 287 parts In-Stock

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287

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SupplyDigital Components

Austria . 6,869 parts In-Stock

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Kulean Microsystems

USA . 6,095 parts In-Stock

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Problanco Electronics

Mexico . 5,563 parts In-Stock

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TANS Electronics

Latvia . 4,693 parts In-Stock

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Corphita

USA . 2,258 parts In-Stock

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UHIMA Technologies

Türkiye . 909 parts In-Stock

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909

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Corohmni

South Africa . 287 parts In-Stock

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Overview

Unleash the power of precision with the LV8011V by Onsemi, a top-of-the-line Motion Control IC designed to elevate your projects to new heights. Onsemi's reputation for superior quality and innovation shines through in this product, offering customers unmatched reliability and performance. Perfect for a wide range of applications, this Brush DC Motor Controller is a game-changer in the industry. Experience seamless operation and enhanced efficiency with the LV8011V, delivering value, benefits, and advantages that will revolutionize your work. Elevate your creations with Onsemi's LV8011V Motion Control IC today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy materials are common in IC packaging, providing a good balance of durability and cost-effectiveness.

Surface Mount: YES

Surface mount technology allows for easier and more efficient PCB assembly.

Nominal Supply Voltage (Vsup): 5 V

The 5V supply voltage is a standard voltage level in many electronic systems, making this IC compatible with a wide range of applications.

Maximum Output Current: 5 A

The high output current capability of 5A allows for driving powerful brush DC motors.

Technology: BICMOS

BICMOS technology combines the advantages of both Bipolar and CMOS technologies, providing high speed and low power consumption.

Technical Specifications

Motion Control ICs LV8011V attributes and parameters. Explore more Motion Control ICs devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G20

Length:

6.5 mm

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

-20 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP20,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.5 mm

Sub-Category:

Motion Control Electronics

Maximum Supply Current (Isup):

1.2 mA

Maximum Supply Voltage (Vsup):

6.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width (mm):

4.4 mm

Trade Compliance

LV8011V Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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