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LV8019LP-MPB-E

Onsemi

LV8019LP-MPB-E by Onsemi

LV8019LP-MPB-E by Onsemi is a Motion Control IC with 24 terminals, BICMOS technology, and 5V supply voltage. It operates b/w -30 °C to 85°C, suitable for applications requiring precise motion control in robotics or automation systems.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 6,748 parts In-Stock

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Digiode

USA . 919 parts In-Stock

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AZTECH Wire

Italy . 343 parts In-Stock

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$11.340

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TANS Electronics

Latvia . 5,893 parts In-Stock

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Problanco Electronics

Mexico . 5,892 parts In-Stock

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Kulean Microsystems

USA . 5,210 parts In-Stock

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SupplyDigital Components

Austria . 3,698 parts In-Stock

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Kepictronics

USA . 935 parts In-Stock

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Corphita

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Corohmni

South Africa . 457 parts In-Stock

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Microchip USA

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UHIMA Technologies

Türkiye . 256 parts In-Stock

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Overview

Experience unparalleled quality and innovation with the LV8019LP-MPB-E by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge Motion Control ICs that are designed to meet the demands of today's applications. The LV8019LP-MPB-E offers customers exceptional value, reliability, and performance, making it the perfect choice for your next project. From industrial automation to robotics, this product is versatile and efficient, ensuring smooth operation and precise control. Trust Onsemi to provide you with the best solutions for your motion control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the IC, ensuring long-lasting performance.

Surface Mount: YES

Surface mount technology allows for easy installation and compact design, making it suitable for modern electronic devices.

Nominal Supply Voltage (Vsup): 5 V

Operating at a nominal supply voltage of 5V makes it compatible with a wide range of applications and power sources.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this IC can withstand demanding environmental conditions.

Technology: BICMOS

Utilizing BiCMOS technology combines the benefits of both bipolar and CMOS technologies, offering high-speed performance and low power consumption.

Technical Specifications

Motion Control ICs LV8019LP-MPB-E attributes and parameters. Explore more Motion Control ICs devices from Onsemi

Specs

JESD-30 Code:

S-PQCC-N24

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC24,.13SQ,16

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

Motion Control Electronics

Maximum Supply Current (Isup):

1.3 mA

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Trade Compliance

LV8019LP-MPB-E Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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