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LV5682P-E

Onsemi

LV5682P-E by Onsemi

LV5682P-E by Onsemi is a Power Management IC with 24V nominal voltage. It has 25 terminals in an IN-LINE package style, suitable for industrial applications. With a temperature range of -40 to 85 °C, it supports power supply circuits efficiently.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 1,814 parts In-Stock

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AZTECH Wire

Italy . 1,212 parts In-Stock

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$15.770

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Component Stockers USA

USA . 714 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 12,659 parts In-Stock

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Problanco Electronics

Mexico . 5,176 parts In-Stock

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Kulean Microsystems

USA . 4,229 parts In-Stock

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Corphita

USA . 2,437 parts In-Stock

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SupplyDigital Components

Austria . 478 parts In-Stock

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UHIMA Technologies

Türkiye . 419 parts In-Stock

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TANS Electronics

Latvia . 295 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 161 parts In-Stock

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Overview

Enhance your power management solutions with the LV5682P-E by Onsemi. Built with superior quality and expertise, Onsemi's Power Management ICs are designed to optimize performance and efficiency in a variety of applications. From industrial to consumer electronics, this product offers unmatched value with its reliable operation and advanced features. Trust Onsemi for cutting-edge technology that delivers unparalleled benefits to customers, ensuring seamless integration and enhanced functionality in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for ensuring the product's longevity and portability.

Nominal Supply Voltage (Vsup): 24 V

Ideal for applications that require a stable and consistent power supply at 24V.

Maximum Operating Temperature: 85 °C

Can operate in high-temperature environments, making it suitable for industrial applications.

No. of Terminals: 25

Sufficient number of terminals for connecting various components and peripherals.

Maximum Supply Current (Isup): 0.8 mA

Low supply current consumption, making it energy-efficient and cost-effective.

Technical Specifications

Power Management ICs LV5682P-E attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

JESD-30 Code:

R-PZIP-T25

JESD-609 Code:

e6

No. of Terminals:

25

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

ZIP

Package Equivalence Code:

ZIP25,.16,.16,40

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

24

Qualification:

Not Qualified

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.8 mA

Nominal Supply Voltage (Vsup):

24 V

Surface Mount:

NO

Temperature Grade:

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

1 mm

Terminal Position:

ZIG-ZAG

Trade Compliance

LV5682P-E Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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