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LV56831P

Onsemi

LV56831P by Onsemi

LV56831P by Onsemi is a Power Management IC with 15 terminals, operating b/w -40 to 85 °C. It supports 4 channels and has a supply voltage range of 7-16 V. Ideal for industrial applications requiring power supply support circuits in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,177 parts In-Stock

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Vyrian

USA . 1,195 parts In-Stock

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Problanco Electronics

Mexico . 6,905 parts In-Stock

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SupplyDigital Components

Austria . 5,648 parts In-Stock

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TANS Electronics

Latvia . 4,233 parts In-Stock

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Kulean Microsystems

USA . 2,337 parts In-Stock

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Corphita

USA . 1,994 parts In-Stock

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Corohmni

South Africa . 440 parts In-Stock

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UHIMA Technologies

Türkiye . 402 parts In-Stock

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Overview

Experience superior power management with the LV56831P by Onsemi. This high-quality Power Management IC offers unparalleled reliability and efficiency, making it an essential component for a wide range of industrial applications. With its advanced features and robust design, this product ensures optimal performance and longevity. Say goodbye to power supply issues and hello to seamless operations with the LV56831P. Trust Onsemi to deliver excellence in every aspect of your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and cost-effective, which is ideal for power management ICs that need to be efficient and affordable.

Nominal Supply Voltage (Vsup): 14.4 V

The nominal supply voltage of 14.4V is suitable for various applications, providing a stable power source for the IC to function effectively.

No. of Terminals: 15

Having 15 terminals allows for multiple connections and functions to be supported by the power management IC, making it versatile and adaptable for different use cases.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this power management IC can handle high heat levels without malfunctioning, ensuring reliability in challenging environments.

Width (mm): 3 mm

The compact width of 3mm makes this power management IC suitable for applications where space is limited, providing flexibility in design and installation.

Technical Specifications

Power Management ICs LV56831P attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

SEATED HGT-NOM

Adjustable Threshold:

NO

JESD-30 Code:

R-PZIP-T15

Length:

21.6 mm

No. of Channels:

4

No. of Functions:

1

No. of Terminals:

15

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

IN-LINE, HEAT SINK/SLUG, SHRINK PITCH

Maximum Seated Height:

14.55 mm

Maximum Supply Voltage (Vsup):

16 V

Minimum Supply Voltage (Vsup):

7 V

Nominal Supply Voltage (Vsup):

14.4 V

Surface Mount:

NO

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

1.27 mm

Terminal Position:

ZIG-ZAG

Width (mm):

3 mm

Trade Compliance

LV56831P Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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