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LV5622LP

Onsemi

LV5622LP by Onsemi

LV5622LP by Onsemi is a Power Management IC with 16 terminals in a square chip carrier package. Operating temperature ranges from -30 to 85 °C, with a supply voltage of 3.7V and max current of 0.025mA. Ideal for applications requiring efficient power management in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,014 parts In-Stock

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Digiode

USA . 466 parts In-Stock

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466

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TANS Electronics

Latvia . 7,999 parts In-Stock

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7,999

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Problanco Electronics

Mexico . 4,606 parts In-Stock

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Kulean Microsystems

USA . 4,415 parts In-Stock

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SupplyDigital Components

Austria . 3,082 parts In-Stock

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Corphita

USA . 1,853 parts In-Stock

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UHIMA Technologies

Türkiye . 690 parts In-Stock

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690

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Corohmni

South Africa . 88 parts In-Stock

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Overview

Unleash the power of efficiency and reliability with the LV5622LP by Onsemi. As a leading manufacturer in the industry of Power Management ICs, Onsemi guarantees top-notch quality and performance in every product they create. The LV5622LP is a game-changer, offering seamless integration and superior functionality for a wide range of applications. Experience the value and benefits of this innovative technology, providing customers with a competitive edge and peace of mind. Trust Onsemi to deliver excellence in every aspect, from package body material to terminal form, ensuring maximum satisfaction and optimal results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and cost-effective, making it a practical choice for power management applications.

Surface Mount: YES

Being surface mount compatible allows for easy and efficient assembly onto circuit boards, saving time and effort during manufacturing.

Nominal Supply Voltage (Vsup): 3.7 V

The 3.7V supply voltage is suitable for many portable electronic devices, providing the necessary power without overloading the system.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this power management IC can operate reliably even in high temperature environments.

Technology: BICMOS

Utilizing BICMOS technology offers the benefits of both bipolar and CMOS technologies, resulting in improved performance and efficiency.

Technical Specifications

Power Management ICs LV5622LP attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

JESD-30 Code:

S-PQCC-N16

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.10SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

3.7

Qualification:

Not Qualified

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.025 mA

Nominal Supply Voltage (Vsup):

3.7 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Trade Compliance

LV5622LP Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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