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LB1638M(DIP10S)

Onsemi

LB1638M(DIP10S) by Onsemi

LB1638M(DIP10S) by Onsemi is a Motion Control IC with 5V supply voltage, 10 terminals, and 40mA max supply current. Its rectangular plastic/epoxy package is ideal for commercial applications requiring -20 to 70 °C operating temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,792 parts In-Stock

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Digiode

USA . 472 parts In-Stock

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TANS Electronics

Latvia . 3,704 parts In-Stock

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Kulean Microsystems

USA . 3,326 parts In-Stock

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Problanco Electronics

Mexico . 1,833 parts In-Stock

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SupplyDigital Components

Austria . 749 parts In-Stock

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Corphita

USA . 682 parts In-Stock

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UHIMA Technologies

Türkiye . 536 parts In-Stock

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Corohmni

South Africa . 165 parts In-Stock

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Overview

Discover the power of motion control with the LB1638M(DIP10S) by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in all their products. This Motion Control IC is versatile and can be used in a wide range of applications, providing precise control and efficiency. With a nominal supply voltage of 5V and a maximum supply current of 40mA, this IC offers exceptional value and performance for customers looking to optimize their motion control systems. Experience the advantages of seamless motion control with the LB1638M(DIP10S) by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for applications where weight and durability are important factors.

Nominal Supply Voltage (Vsup): 5 V

Operating at a commonly used 5V supply voltage makes this product compatible with a wide range of systems and power sources.

No. of Terminals: 10

Having 10 terminals provides flexibility in connecting to external devices or peripherals, making it versatile for different use cases.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this product can withstand high temperatures, making it suitable for industrial applications.

Terminal Position: DUAL

The dual terminal position allows for more efficient routing of connections and can help reduce the overall footprint of the system.

Technical Specifications

Motion Control ICs LB1638M(DIP10S) attributes and parameters. Explore more Motion Control ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDIP-T10

No. of Terminals:

10

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP10,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

Motion Control Electronics

Maximum Supply Current (Isup):

40 mA

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

NO

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

LB1638M(DIP10S) Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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