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LA1845N

Onsemi

LA1845N by Onsemi

LA1845N by Onsemi is an audio single chip receiver with 0.45% harmonic distortion. It operates b/w -20 to 80 °C, has 24 terminals, and offers a signal-to-noise ratio of 80 dB for FM. This IC is commonly used in commercial extended temperature grade applications requiring AM/FM demodulation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,756 parts In-Stock

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Vyrian

USA . 846 parts In-Stock

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Kulean Microsystems

USA . 8,077 parts In-Stock

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SupplyDigital Components

Austria . 7,266 parts In-Stock

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Metaverse IC Inc.

Canada . 5,857 parts In-Stock

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TANS Electronics

Latvia . 4,398 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Problanco Electronics

Mexico . 1,103 parts In-Stock

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Kepictronics

USA . 700 parts In-Stock

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700

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UHIMA Technologies

Türkiye . 664 parts In-Stock

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Corphita

USA . 489 parts In-Stock

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Corohmni

South Africa . 292 parts In-Stock

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Overview

Unlock a world of crystal-clear audio with the LA1845N by Onsemi, a top-tier manufacturer known for cutting-edge technology and reliability. This receiver IC is perfect for a wide range of applications, offering unparalleled quality and performance. Experience the value and benefits of this innovative product, from its sleek design to its impressive signal-to-noise ratio. Elevate your audio experience with the LA1845N and discover the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material helps in reducing overall weight of the product while ensuring long-term reliability.

Harmonic Distortion: 0.45%

Low harmonic distortion ensures high quality audio output with minimal interference.

Nominal Signal to Noise Ratio (FM): 80 dB

High signal to noise ratio ensures clear reception and optimal sound quality.

Minimum Supply Voltage (Vsup): 4.3 V

Low minimum supply voltage requirement makes it suitable for a wide range of applications and power sources.

Nominal Output Voltage (FM): 360 mV

High output voltage ensures strong audio signal for amplification and playback.

Technical Specifications

Receiver ICs LA1845N attributes and parameters. Explore more Receiver ICs devices from Onsemi

Specs

General IC Type:

Demodulation Type:

AM/FM

Harmonic Distortion:

.45 %

JESD-30 Code:

R-PDIP-T24

Length:

21 mm

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-20 Cel

Nominal Output Voltage (AM):

160 mV

Nominal Output Voltage (FM):

360 mV

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

IN-LINE, SHRINK PITCH

Qualification:

Not Qualified

Maximum Seated Height:

3.9 mm

Nominal Signal to Noise Ratio (FM):

80 dB

Maximum Supply Voltage (Vsup):

8.5 V

Minimum Supply Voltage (Vsup):

4.3 V

Surface Mount:

NO

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.778 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

LA1845N General Purpose ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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