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LA1781M

Onsemi

LA1781M by Onsemi

LA1781M by Onsemi is an audio single chip receiver with 0.3% harmonic distortion and 82 dB signal-to-noise ratio. It operates b/w -40 to 85 °C, suitable for industrial applications. With a compact square package style and gull wing terminals, it's ideal for surface mount designs requiring high-quality audio reception.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,413 parts In-Stock

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Vyrian

USA . 1,080 parts In-Stock

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SupplyDigital Components

Austria . 6,678 parts In-Stock

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Kulean Microsystems

USA . 6,649 parts In-Stock

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Problanco Electronics

Mexico . 4,550 parts In-Stock

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TANS Electronics

Latvia . 2,177 parts In-Stock

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Corphita

USA . 1,908 parts In-Stock

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UHIMA Technologies

Türkiye . 867 parts In-Stock

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Corohmni

South Africa . 461 parts In-Stock

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Overview

Enhance your audio experience with the LA1781M by Onsemi. This high-quality receiver IC offers unparalleled performance and reliability, thanks to Onsemi's reputation for producing top-notch electronic components. Ideal for a wide range of applications, this audio single chip receiver guarantees crystal-clear sound with minimal distortion. Upgrade your audio system today and enjoy the benefits of the LA1781M's superior signal-to-noise ratio, easy installation, and impressive output voltage. Trust Onsemi for cutting-edge technology that delivers exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the receiver IC, ensuring a long lifespan.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during production.

General IC Type: AUDIO SINGLE CHIP RECEIVER

Integration of audio functionality into a single chip simplifies the design process and reduces overall component count.

Harmonic Distortion: 0.3 %

Low harmonic distortion ensures high-quality audio output, making it suitable for applications where audio fidelity is important.

No. of Terminals: 64

Sufficient number of terminals for connectivity requirements, allowing for versatile use in various electronic devices.

Maximum Operating Temperature: 85 °C

Can operate in high-temperature environments, increasing the range of applications where the receiver IC can be used.

Nominal Signal to Noise Ratio (FM): 82 dB

High signal-to-noise ratio ensures clear and crisp audio reception, providing an enhanced user experience.

Minimum Supply Voltage (Vsup): 7.5 V

Low minimum supply voltage requirement makes it compatible with a wide range of power sources, increasing flexibility in design.

Nominal Output Voltage (AM): 175 mV

Stable output voltage for AM demodulation ensures reliable audio signal transmission to external components.

Demodulation Type: AM/FM

Support for both AM and FM demodulation enables the receiver IC to receive and process different types of audio signals.

Temperature Grade: INDUSTRIAL

Designed to withstand industrial operating conditions, making it suitable for use in demanding environments.

Maximum Supply Current: 110 mA

Low supply current consumption for typical operation helps in conserving power and improving energy efficiency.

Nominal Output Voltage (FM): 295 mV

Higher output voltage for FM demodulation ensures strong and reliable audio signal transmission.

Technical Specifications

Receiver ICs LA1781M attributes and parameters. Explore more Receiver ICs devices from Onsemi

Specs

General IC Type:

Demodulation Type:

AM/FM

Harmonic Distortion:

.3 %

JESD-30 Code:

S-PQFP-G64

Length:

14 mm

No. of Functions:

1

No. of Terminals:

64

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Voltage (AM):

175 mV

Nominal Output Voltage (FM):

295 mV

Package Body Material:

PLASTIC/EPOXY

Package Code:

QFP

Package Shape:

Package Style (Meter):

FLATPACK

Qualification:

Not Qualified

Maximum Seated Height:

3 mm

Nominal Signal to Noise Ratio (FM):

82 dB

Maximum Supply Current:

110 mA

Maximum Supply Voltage (Vsup):

9 V

Minimum Supply Voltage (Vsup):

7.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Width:

14 mm

Trade Compliance

LA1781M General Purpose ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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