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J175_D26Z

Onsemi

J175_D26Z by Onsemi

J175_D26Z by Onsemi is a P-CHANNEL FET with 3 terminals in a ROUND package. It operates in DEPLETION MODE, with a max power dissipation of 0.35W and max temp of 150°C. Ideal for SWITCHING applications due to low drain-source resistance of 125 ohm.

Median Price

$0.279

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 94 parts In-Stock

1+ parts

$0.541

100+ parts

$0.535

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94

$0.541

$0.535

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Mouser Electronics

USA . 10,479 parts In-Stock

1+ parts

$0.580

100+ parts

$0.284

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$0.232

10k+ parts

$0.134

10,479

$0.580

$0.284

$0.232

$0.134

Distrelec

Netherlands . 1,265 parts In-Stock

1+ parts

$1.101

100+ parts

$1.046

1k+ parts

$0.883

10k+ parts

$0.774

1,265

$1.101

$1.046

$0.883

$0.774

Rochester

USA . 76,678 parts In-Stock

1+ parts

-

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$0.151

1k+ parts

$0.126

10k+ parts

$0.112

76,678

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$0.151

$0.126

$0.112

Verical

USA . 4,000 parts In-Stock

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$0.147

4,000

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$0.147

Master Electronics

USA . 4,000 parts In-Stock

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$0.116

4,000

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$0.116

RS (Exports)

UK . 2,700 parts In-Stock

1+ parts

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100+ parts

$0.279

1k+ parts

$0.263

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2,700

-

$0.279

$0.263

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Flip Electronics (Authorized)

USA . 1,544 parts In-Stock

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1,544

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Chip1Stop

Japan . 497 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 1,310 parts In-Stock

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$0.118

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1,310

$0.118

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Nova Conductors

Japan . 250 parts In-Stock

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$0.221

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250

$0.221

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Component Electronics Inc.

Canada . 20 parts In-Stock

1+ parts

$0.380

100+ parts

$0.290

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$0.250

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20

$0.380

$0.290

$0.250

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DigiKey Marketplace

USA . 135,458 parts In-Stock

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Chip Stock

USA . 41,000 parts In-Stock

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Vyrian

USA . 26,481 parts In-Stock

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IBS Electronics

USA . 20,000 parts In-Stock

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$0.163

20,000

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$0.163

Schukat

Germany . 2,000 parts In-Stock

1+ parts

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$0.262

1k+ parts

$0.208

10k+ parts

$0.173

2,000

-

$0.262

$0.208

$0.173

NAC Semi

USA . 2,000 parts In-Stock

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$0.188

2,000

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$0.188

Flip Electronics

USA . 1,544 parts In-Stock

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1,544

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Anansix

USA . 1,283 parts In-Stock

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1,283

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EMSNET

USA . 900 parts In-Stock

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900

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North Shore Components

USA . 836 parts In-Stock

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836

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Distributors (Availability)

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Ampacity Inc.

Singapore . 55,376 parts In-Stock

1+ parts

$0.105

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55,376

$0.105

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Semicontronic

India . 32,184 parts In-Stock

1+ parts

$0.105

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$0.102

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$0.102

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32,184

$0.105

$0.102

$0.102

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Corphita

USA . 1,272 parts In-Stock

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$0.112

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Corohmni

South Africa . 252 parts In-Stock

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$0.116

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252

$0.116

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Continental Prestige Electronics

USA . 41,888 parts In-Stock

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$0.221

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$0.217

41,888

$0.221

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$0.217

Argo Parts USA

USA . 3,563 parts In-Stock

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$0.221

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$0.214

3,563

$0.221

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$0.214

Aztec Data Supply Inc.

USA . 1,261 parts In-Stock

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$1.689

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1,261

$1.689

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Component Stockers USA

USA . 296 parts In-Stock

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$99.990

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$99.990

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Metaverse IC Inc.

Canada . 165,500 parts In-Stock

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Kepictronics

USA . 111,000 parts In-Stock

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Authorized Procurement Solutions

USA . 90,245 parts In-Stock

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GreenTree Electronics

Israel . 80,000 parts In-Stock

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Perfect Parts

USA . 27,082 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,374 parts In-Stock

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Kulean Microsystems

USA . 8,322 parts In-Stock

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Lixinc

USA . 6,604 parts In-Stock

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Problanco Electronics

Mexico . 4,758 parts In-Stock

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SupplyDigital Components

Austria . 4,149 parts In-Stock

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Netroflash

USA . 4,000 parts In-Stock

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$0.217

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$0.210

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$0.206

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$0.217

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$0.206

TANS Electronics

Latvia . 2,135 parts In-Stock

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Supply Digital

USA . 1,701 parts In-Stock

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UHIMA Technologies

Türkiye . 175 parts In-Stock

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Overview

Unlock the power of small signal field effect transistors with the J175_D26Z by Onsemi. Manufactured with precision and quality by Onsemi, this P-channel transistor is designed for switching applications, offering reliable performance and durability. Ideal for a wide range of electronic devices, this transistor provides value and efficiency to customers seeking high-quality components. Enhance your projects with the advantages of the J175_D26Z, where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and longevity.

Polarity or Channel Type: P-CHANNEL

Suitable for switching applications and can handle high voltage, making it versatile in various circuits.

Configuration: SINGLE

Simplified setup and easy integration into circuits.

Transistor Application: SWITCHING

Optimized for fast switching applications, ensuring efficient performance.

Package Shape: ROUND

Compact design that saves space and allows for easy placement on the circuit board.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections on the circuit board.

Operating Mode: DEPLETION MODE

Enhances control over the transistor for specific applications.

No. of Terminals: 3

Simple setup with minimal connections required.

Maximum Power Dissipation (Abs): 0.35 W

Efficient power handling capability, reducing the risk of overheating.

Package Style (Meter): CYLINDRICAL

Provides a uniform and solid packaging for the transistor.

Field Effect Transistor Technology: JUNCTION

Reliable technology known for low power consumption and high switching speeds.

Maximum Operating Temperature: 150 °C

Can withstand higher temperatures, suitable for industrial applications.

Transistor Element Material: SILICON

Known for its high conductivity and durability, ensuring stable performance over time.

Terminal Finish: MATTE TIN

Corrosion-resistant finish that ensures longevity and reliability in various environments.

Maximum Drain-Source On Resistance: 125 ohm

Low resistance allows for efficient current flow and minimal power loss.

Terminal Position: BOTTOM

Facilitates easy and secure soldering onto the circuit board.

Technical Specifications

Small Signal Field Effect Transistors (FET) J175_D26Z attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain-Source On Resistance:

125 ohm

Field Effect Transistor Technology:

JUNCTION

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Small Signal

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

J175_D26Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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