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IRLS640A

Onsemi

IRLS640A by Onsemi

The Onsemi IRLS640A is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 63A IDM. Ideal for SWITCHING applications, it features 0.18 ohm RDS(on), 64mJ EAS, and operates in ENHANCEMENT MODE up to 150°C.

Median Price

$1.327

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 4 parts In-Stock

1+ parts

$0.593

100+ parts

-

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4

$0.593

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Arrow

USA . 360 parts In-Stock

1+ parts

$0.744

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360

$0.744

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Mouser Electronics

USA . 231 parts In-Stock

1+ parts

$1.910

100+ parts

$1.370

1k+ parts

$0.824

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231

$1.910

$1.370

$0.824

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Farnell

UK . 835 parts In-Stock

1+ parts

$1.990

100+ parts

$0.793

1k+ parts

$0.661

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835

$1.990

$0.793

$0.661

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Element14

Singapore . 1,318 parts In-Stock

1+ parts

$2.014

100+ parts

$1.195

1k+ parts

$0.871

10k+ parts

$0.856

1,318

$2.014

$1.195

$0.871

$0.856

DigiKey

USA . 12,727 parts In-Stock

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$0.680

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12,727

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$0.680

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Flip Electronics (Authorized)

USA . 12,727 parts In-Stock

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12,727

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Verical

USA . 360 parts In-Stock

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Digiode

USA . 3,344 parts In-Stock

1+ parts

$0.563

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3,344

$0.563

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Vyrian

USA . 2,843 parts In-Stock

1+ parts

$0.593

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2,843

$0.593

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Flip Electronics

USA . 16,727 parts In-Stock

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16,727

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DigiKey Marketplace

USA . 11,727 parts In-Stock

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$0.680

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11,727

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$0.680

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NAC Semi

USA . 400 parts In-Stock

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$1.030

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400

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$1.030

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Distributors (Availability)

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Corphita

USA . 2,400 parts In-Stock

1+ parts

$0.534

100+ parts

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2,400

$0.534

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Corohmni

South Africa . 347 parts In-Stock

1+ parts

$0.593

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347

$0.593

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Component Stockers USA

USA . 1,557 parts In-Stock

1+ parts

$0.780

100+ parts

$0.750

1k+ parts

$0.640

10k+ parts

-

1,557

$0.780

$0.750

$0.640

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Continental Prestige Electronics

USA . 1,000 parts In-Stock

1+ parts

$1.160

100+ parts

$0.786

1k+ parts

$0.572

10k+ parts

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1,000

$1.160

$0.786

$0.572

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Aztec Data Supply Inc.

USA . 300 parts In-Stock

1+ parts

$1.743

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300

$1.743

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Microchip USA

USA . 443 parts In-Stock

1+ parts

$11.050

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443

$11.050

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Metaverse IC Inc.

Canada . 50,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,842 parts In-Stock

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Authorized Procurement Solutions

USA . 9,000 parts In-Stock

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Problanco Electronics

Mexico . 6,958 parts In-Stock

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Perfect Parts

USA . 5,600 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,013 parts In-Stock

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SupplyDigital Components

Austria . 3,976 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,342 parts In-Stock

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Kulean Microsystems

USA . 3,024 parts In-Stock

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TANS Electronics

Latvia . 2,878 parts In-Stock

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Supply Digital

USA . 2,263 parts In-Stock

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Glotronic Ltd.

UK . 2,160 parts In-Stock

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Kepictronics

USA . 1,000 parts In-Stock

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Eastek

USA . 500 parts In-Stock

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GreenTree Electronics

Israel . 500 parts In-Stock

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UHIMA Technologies

Türkiye . 101 parts In-Stock

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Overview

Enhance your power management solutions with the IRLS640A by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Field Effect Transistors like the IRLS640A, known for its reliability and efficiency in switching applications. With a robust design and built-in diode, this N-channel transistor offers customers the value of enhanced performance and durability. Whether you're looking to optimize your power systems or improve efficiency in your electronic devices, the IRLS640A provides the benefits and advantages you need to stay ahead in the ever-evolving tech world.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring reliability and durability.

Polarity or Channel Type: N-CHANNEL

Allows for efficient flow of current and better performance in most applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a diode, reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing high efficiency and fast switching speeds.

Minimum DS Breakdown Voltage: 200 V

Withstands high voltages, making it suitable for applications requiring high voltage handling capabilities.

Maximum Pulsed Drain Current (IDM): 63 A

Capable of handling high current pulses, ideal for applications with transient high power requirements.

Maximum Power Dissipation (Abs): 40 W

Efficiently dissipates heat, allowing for continuous operation under high power conditions.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without performance degradation, ensuring reliability.

Technical Specifications

Power Field Effect Transistors (FET) IRLS640A attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (EAS):

64 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

9.8 A

Maximum Drain Current (ID):

9.8 A

Maximum Drain-Source On Resistance:

.18 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

63 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRLS640A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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