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HUF76429S3ST

Onsemi

HUF76429S3ST by Onsemi

HUF76429S3ST by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 44A Drain Current, and 0.025 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 175°C max operating temp.

Median Price

$1.297

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 590 parts In-Stock

1+ parts

$1.260

100+ parts

$0.907

1k+ parts

$0.702

10k+ parts

-

590

$1.260

$0.907

$0.702

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Arrow

USA . 800 parts In-Stock

1+ parts

$1.297

100+ parts

$1.138

1k+ parts

$0.880

10k+ parts

-

800

$1.297

$1.138

$0.880

-

DigiKey

USA . 2,703 parts In-Stock

1+ parts

$2.650

100+ parts

$1.171

1k+ parts

$0.891

10k+ parts

$0.771

2,703

$2.650

$1.171

$0.891

$0.771

Mouser Electronics

USA . 1,263 parts In-Stock

1+ parts

$2.650

100+ parts

$1.180

1k+ parts

$0.894

10k+ parts

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1,263

$2.650

$1.180

$0.894

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Verical

USA . 800 parts In-Stock

1+ parts

-

100+ parts

$1.138

1k+ parts

$0.880

10k+ parts

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800

-

$1.138

$0.880

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Distributors (In-Stock)

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Nova Conductors

Japan . 34 parts In-Stock

1+ parts

$1.005

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34

$1.005

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Digiode

USA . 2,307 parts In-Stock

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$1.501

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2,307

$1.501

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NAC Semi

USA . 31,200 parts In-Stock

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$1.160

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$1.160

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Flip Electronics

USA . 15,200 parts In-Stock

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15,200

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IBS Electronics

USA . 10,400 parts In-Stock

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$0.903

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$0.865

10,400

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$0.903

$0.865

Vyrian

USA . 8,753 parts In-Stock

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Chip Stock

USA . 3,100 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 9,801 parts In-Stock

1+ parts

$0.630

100+ parts

-

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9,801

$0.630

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Semicontronic

India . 3,194 parts In-Stock

1+ parts

$0.630

100+ parts

$0.614

1k+ parts

$0.611

10k+ parts

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3,194

$0.630

$0.614

$0.611

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Corohmni

South Africa . 411 parts In-Stock

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$0.741

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411

$0.741

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Continental Prestige Electronics

USA . 5,195 parts In-Stock

1+ parts

$1.005

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$0.984

5,195

$1.005

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$0.984

Argo Parts USA

USA . 4,371 parts In-Stock

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$1.005

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4,371

$1.005

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Netroflash

USA . 2,000 parts In-Stock

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$1.005

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2,000

$1.005

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Corphita

USA . 1,214 parts In-Stock

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$1.422

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1,214

$1.422

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QUARKTWIN TECHNOLOGY LTD

USA . 20,511 parts In-Stock

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Microchip USA

USA . 9,009 parts In-Stock

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SupplyDigital Components

Austria . 7,912 parts In-Stock

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Problanco Electronics

Mexico . 5,560 parts In-Stock

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Kepictronics

USA . 5,005 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,721 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,147 parts In-Stock

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Supply Digital

USA . 2,887 parts In-Stock

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Metaverse IC Inc.

Canada . 2,810 parts In-Stock

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Perfect Parts

USA . 2,804 parts In-Stock

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TANS Electronics

Latvia . 2,617 parts In-Stock

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Kulean Microsystems

USA . 2,008 parts In-Stock

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Assy Fe

Spain . 1,447 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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UHIMA Technologies

Türkiye . 100 parts In-Stock

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100

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Overview

Unleash the power of innovation with the HUF76429S3ST by Onsemi. Crafted by a leading manufacturer in power field effect transistors, this N-channel transistor offers unmatched performance in switching applications. With a maximum drain current of 47A and a low on-resistance of 0.025 ohms, this transistor ensures efficient power management. Whether you're looking to enhance your electronic projects or improve your industrial systems, the HUF76429S3ST delivers reliability and superior functionality. Upgrade your designs with this high-quality transistor and experience the difference in performance today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and heat dissipation properties, making the transistor reliable for high power applications.

Polarity or Channel Type: N-CHANNEL

Offers efficient current flow and low on-resistance, suitable for various switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode for protection against reverse voltage.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast turn-on and turn-off times.

Surface Mount: YES

Allows for easy and reliable installation on circuit boards, reducing assembly time and costs.

Minimum DS Breakdown Voltage: 60 V

Withstands high voltages, making it suitable for industrial and automotive applications.

Package Shape: RECTANGULAR

Provides a compact form factor, ideal for space-constrained designs.

Terminal Form: GULL WING

Enables easy soldering and installation on the PCB, ensuring a secure connection.

Operating Mode: ENHANCEMENT MODE

Offers precise control over the transistor's conductivity, improving efficiency in switching operations.

Maximum Drain Current (Abs) (ID): 44 A

Handles high currents with low resistance, suitable for power applications that require high performance.

No. of Terminals: 2

Simplifies the circuit layout and reduces complexity in connections.

Maximum Power Dissipation (Abs): 110 W

Can handle high power levels without overheating, ensuring reliable operation under heavy loads.

Package Style (Meter): SMALL OUTLINE

Fits well in compact electronic devices, saving space and allowing for dense PCB designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high efficiency and reliability in switching operations, ideal for demanding applications.

Maximum Operating Temperature: 175 °C

Operates reliably at high temperatures, making it suitable for industrial and automotive environments.

Transistor Element Material: SILICON

Ensures stable performance and high switching speeds, making it suitable for various applications.

Terminal Finish: MATTE TIN

Provides a reliable solder joint, reducing the risk of connection failures.

Maximum Drain-Source On Resistance: 0.025 ohm

Offers low on-resistance, minimizing power loss and heat generation during operation.

Terminal Position: SINGLE

Simplifies the installation process and ensures consistent electrical connections.

Case Connection: DRAIN

Provides a convenient point for external connection, ensuring proper functionality in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Withstands high reflow temperatures for soldering without degradation, ensuring reliability in manufacturing.

Peak Reflow Temperature °C: 245

Can withstand high reflow temperatures during soldering processes, suitable for automated assembly.

Technical Specifications

Power Field Effect Transistors (FET) HUF76429S3ST attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

44 A

Maximum Drain Current (ID):

47 A

Maximum Drain-Source On Resistance:

.025 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

HUF76429S3ST Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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