Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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HUF76429S3ST by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 44A Drain Current, and 0.025 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 175°C max operating temp.
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UHIMA Technologies
Provides good insulation and heat dissipation properties, making the transistor reliable for high power applications.
Offers efficient current flow and low on-resistance, suitable for various switching applications.
Simplifies circuit design and saves space by integrating a diode for protection against reverse voltage.
Designed specifically for switching applications, ensuring fast turn-on and turn-off times.
Allows for easy and reliable installation on circuit boards, reducing assembly time and costs.
Withstands high voltages, making it suitable for industrial and automotive applications.
Provides a compact form factor, ideal for space-constrained designs.
Enables easy soldering and installation on the PCB, ensuring a secure connection.
Offers precise control over the transistor's conductivity, improving efficiency in switching operations.
Handles high currents with low resistance, suitable for power applications that require high performance.
Simplifies the circuit layout and reduces complexity in connections.
Can handle high power levels without overheating, ensuring reliable operation under heavy loads.
Fits well in compact electronic devices, saving space and allowing for dense PCB designs.
Provides high efficiency and reliability in switching operations, ideal for demanding applications.
Operates reliably at high temperatures, making it suitable for industrial and automotive environments.
Ensures stable performance and high switching speeds, making it suitable for various applications.
Provides a reliable solder joint, reducing the risk of connection failures.
Offers low on-resistance, minimizing power loss and heat generation during operation.
Simplifies the installation process and ensures consistent electrical connections.
Provides a convenient point for external connection, ensuring proper functionality in the circuit.
Withstands high reflow temperatures for soldering without degradation, ensuring reliability in manufacturing.
Can withstand high reflow temperatures during soldering processes, suitable for automated assembly.
Power Field Effect Transistors (FET) HUF76429S3ST attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
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Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
HUF76429S3ST Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Description Chg 01/Apr/2016 Logo 17/Aug/2017
PCN Assembly/Origin - Mult Dev 14/Dec/2022
PCN Packaging - Mult Dev Box Chgs 1/Jul/2021 Mult Devices 24/Oct/2017
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148WT-7
Diodes Incorporated
1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.
LM555CN
Rca Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
SMBJ18CA
General Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
OPA2227UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
1N4148
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM358N
Harris Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
2N2222A
Texas Instruments
2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).
BSS138
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Drain Current (ID): .2 A; Operating Mode: ENHANCEMENT MODE;
Lite-on Semiconductor
2N7002
Sinyork
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
Temic Semiconductors
M24308/2-1F
Esterline Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Option-1: HOLE .115-.125; Mounting Type: CABLE AND PANEL; Mating Contact Finish: NOT SPECIFIED;
Itt Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
USBLC6-2SC6
STMicroelectronics
USBLC6-2SC6 by STMicroelectronics is a unidirectional transient voltage suppressor diode with a breakdown voltage of 6V. It has a max clamping voltage of 17V and operates in temperatures ranging from -40 to 125°C. This device, with dual terminals and matte tin finish, is ideal for protecting sensitive electronics from voltage spikes in various applications.
1554216004
Molex
WIRE AND CABLE;
OHN3020U
Tt Electronics Plc
OHN3020U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 5mT. It features an output range of 25mA and operates in temperatures ranging from -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields, such as automotive sensors or industrial automation systems.
Rfe International
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;
LM358M
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
STM32H753IIT6
STM32H753IIT6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs and 2-Ch 12-Bit DACs, suitable for industrial applications requiring high-speed data processing and connectivity via CAN, ETHERNET, USB, and more.
LM555CM
LM555CM by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V and max operating temperature of 70°C. It comes in a small outline package, suitable for applications requiring pulse generation or rectangular waveform outputs. With surface mount capability and low supply current of 15mA, it is ideal for commercial-grade electronic circuits.
IRFR6215TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Transistor Element Material: SILICON; Case Connection: DRAIN;
IRF1010NSTRLPBF
Infineon Technologies
IRF1010NSTRLPBF by Infineon Technologies is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 290A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has 0.011 ohm Drain-Source On Resistance and can handle up to 170W power dissipation.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Qualification: Not Qualified; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;
SI7611DN-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI7611DN-T1-GE3 is a P-CHANNEL FET for switching applications. Features include 40V DS breakdown voltage, 20A pulsed drain current, and 0.025 ohm max drain-source resistance. Ideal for high-power applications requiring efficient switching with a max power dissipation of 39W in a small outline package.
FDD4243
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
SCT3080KLGC11
ROHM
ROHM's SCT3080KLGC11 is a N-CHANNEL FET with 1200V DS breakdown voltage and 77A IDM. Ideal for switching applications, it features a single configuration with built-in diode and 0.104 ohm max drain-source resistance.
BSC340N08NS3GATMA1
Infineon's BSC340N08NS3GATMA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 92A IDM, 20mJ EAS, and 0.034 ohm RDS(on). Operating from -55 to 150 °C, this MOSFET has a max power dissipation of 32W in a small outline package.
FQD3P50TM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;
IRF840PBF
Vishay Intertechnology's IRF840PBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 32A IDM and 510mJ EAS ratings. The transistor operates in ENHANCEMENT MODE with 0.85 ohm RDS(on) and can handle up to 125W power dissipation.
DMP4065S-7
DMP4065S-7 by Diodes Inc. is a P-channel FET with 40V DS breakdown voltage and 20A IDM, ideal for switching applications. It operates in enhancement mode, has 0.08 ohm RDS(on), and can handle up to 1.4W power dissipation. With a max temp of 150°C, it's suitable for various electronic designs requiring high-performance MOSFETs.
IRFL9014TRPBF
Vishay Intertechnology's IRFL9014TRPBF is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 14A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 3.1W.
BSC600N25NS3GATMA1
BSC600N25NS3GATMA1 by Infineon is a N-CHANNEL FET with 250V DS Breakdown Voltage, 100A IDM, and 0.06 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE. The transistor operates b/w -55 to 150 °C and has a max power dissipation of 125W in a SMALL OUTLINE package.
IRLL024NTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL; Case Connection: DRAIN;
FQP30N06L
FQP30N06L by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 128A IDM Pulsed Drain Current, 350mJ EAS Avalanche Energy Rating, and 0.045 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 79W at 175°C.
IRF840SPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; No. of Elements: 1;
IRF540NPBF
IRF540NPBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 33A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 185mJ Avalanche Energy Rating, and operates in ENHANCEMENT MODE.
STL57N65M5
STL57N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 90A IDM, 960mJ EAS, and 0.069 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE and has a DRAIN case connection.
IRFP460APBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Package Style (Meter): FLANGE MOUNT; Transistor Application: SWITCHING;
FDB2532
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 310 W; Qualification: Not Qualified; Maximum Operating Temperature: 175 Cel;
IRFH4251DTRPBF
IRFH4251DTRPBF by Infineon Technologies is a N-CHANNEL Power FET with 25V DS Breakdown Voltage. It features SERIES CONNECTED, CENTER TAP configuration and 120A Max Pulsed Drain Current. Ideal for SWITCHING applications, this transistor has a 0.0046 ohm Max Drain-Source On Resistance and operates in ENHANCEMENT MODE up to 150°C.
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HUF75645P3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 310 W; JEDEC-95 Code: TO-220AB; No. of Elements: 1;
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 310 W; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSFM-T3;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 310 W; Terminal Form: THROUGH-HOLE; No. of Terminals: 3;
HUF76423P3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: RECTANGULAR;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 175 Cel;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Minimum DS Breakdown Voltage: 60 V; Terminal Form: THROUGH-HOLE;
HUF76407D3ST
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Element Material: SILICON; Maximum Drain Current (ID): 12 A;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE;
HUF76639S3S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 175 Cel;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Minimum DS Breakdown Voltage: 100 V; Transistor Application: SWITCHING;
HUF76429S3ST
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 47 A; No. of Terminals: 2; Transistor Application: SWITCHING;
HUF76639S3ST_F085
HUF76639S3ST_F085 by Fairchild Semiconductor is a N-CHANNEL power FET with a min DS breakdown voltage of 100V. It is used for switching applications and has a max drain current of 50A and max power dissipation of 180W.
HUF76639S3ST-F085
HUF76639S3ST-F085 by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 51A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 175°C. Package: PLASTIC/EPOXY, GULL WING terminals, and SMALL OUTLINE style.
HUF75345S3ST
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 325 W; JESD-609 Code: e3; Terminal Form: GULL WING;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 325 W; No. of Terminals: 2; Maximum Drain-Source On Resistance: .007 ohm;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Turn Off Time (toff): 115 ns; JEDEC-95 Code: TO-263AB;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 215 W; JESD-609 Code: e0; JESD-30 Code: R-PSSO-G2;
HUF76429S3S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Maximum Drain-Source On Resistance: .025 ohm; Transistor Application: SWITCHING;
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