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FQPF20N06L

Onsemi

FQPF20N06L by Onsemi

FQPF20N06L by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 62.8A IDM, 170mJ EAS, and 0.07ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 30W at 175°C.

Median Price

$1.223

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 31,199 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.600

10k+ parts

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31,199

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-

$1.600

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Flip Electronics (Authorized)

USA . 28,016 parts In-Stock

1+ parts

-

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28,016

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Rochester

USA . 152 parts In-Stock

1+ parts

-

100+ parts

$0.846

1k+ parts

$0.702

10k+ parts

$0.626

152

-

$0.846

$0.702

$0.626

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,780 parts In-Stock

1+ parts

$0.988

100+ parts

-

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2,780

$0.988

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$1.119

100+ parts

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300

$1.119

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Flip Electronics

USA . 31,199 parts In-Stock

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31,199

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DigiKey Marketplace

USA . 27,708 parts In-Stock

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27,708

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Chip Stock

USA . 22,000 parts In-Stock

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22,000

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Vyrian

USA . 18,651 parts In-Stock

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18,651

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ACDS - Activité Composants Distribution Service

France . 615 parts In-Stock

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615

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ComSIT Distribution GmbH

Germany . 350 parts In-Stock

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350

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Bristol Electronics

USA . 120 parts In-Stock

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120

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Decca Corp

Germany . 18,826 parts In-Stock

1+ parts

$0.880

100+ parts

$0.862

1k+ parts

$0.854

10k+ parts

-

18,826

$0.880

$0.862

$0.854

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Semicontronic

India . 18,662 parts In-Stock

1+ parts

$0.880

100+ parts

$0.858

1k+ parts

$0.854

10k+ parts

-

18,662

$0.880

$0.858

$0.854

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Ampacity Inc.

Singapore . 18,502 parts In-Stock

1+ parts

$0.880

100+ parts

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18,502

$0.880

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Corphita

USA . 2,101 parts In-Stock

1+ parts

$0.936

100+ parts

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2,101

$0.936

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Corohmni

South Africa . 105 parts In-Stock

1+ parts

$1.040

100+ parts

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105

$1.040

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Continental Prestige Electronics

USA . 1,817 parts In-Stock

1+ parts

$1.119

100+ parts

-

1k+ parts

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10k+ parts

$1.097

1,817

$1.119

-

-

$1.097

Argo Parts USA

USA . 1,750 parts In-Stock

1+ parts

$1.119

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1,750

$1.119

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$1.119

100+ parts

$1.097

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1,000

$1.119

$1.097

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Aztec Data Supply Inc.

USA . 836 parts In-Stock

1+ parts

$1.318

100+ parts

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836

$1.318

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Component Stockers USA

USA . 619 parts In-Stock

1+ parts

$99.990

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619

$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Perfect Parts

USA . 8,929 parts In-Stock

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8,929

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SupplyDigital Components

Austria . 8,254 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,996 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,936 parts In-Stock

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6,936

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Problanco Electronics

Mexico . 6,590 parts In-Stock

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6,590

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Alle Elektronik GmbH

Germany . 4,624 parts In-Stock

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4,624

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Microchip USA

USA . 3,732 parts In-Stock

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3,732

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TANS Electronics

Latvia . 2,782 parts In-Stock

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2,782

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Kulean Microsystems

USA . 2,081 parts In-Stock

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2,081

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Supply Digital

USA . 506 parts In-Stock

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506

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UHIMA Technologies

Türkiye . 55 parts In-Stock

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55

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Overview

Unleash the power of the FQPF20N06L by Onsemi, a top-quality Power Field Effect Transistor that guarantees superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this N-CHANNEL transistor with a built-in diode is perfect for switching applications. With a maximum pulsed drain current of 62.8 A and an avalanche energy rating of 170 mJ, this transistor offers unmatched efficiency and durability. Upgrade your electronics with the FQPF20N06L and experience seamless operation and enhanced productivity like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ideal for portable or rugged applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON-resistance and higher current carrying capacity compared to P-channel FETs, making them more efficient for many applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against reverse current flow, enhancing the reliability of the overall system.

Transistor Application: SWITCHING

Designed for switching applications, this FET can rapidly turn on and off, making it suitable for power management and control tasks.

Minimum DS Breakdown Voltage: 60 V

The high breakdown voltage allows this FET to handle higher voltages without damage, ensuring robust performance in various power applications.

Package Shape: RECTANGULAR

The rectangular shape provides a compact footprint, ideal for space-constrained designs where efficiency is crucial.

Terminal Form: THROUGH-HOLE

The through-hole terminals offer easy and secure soldering onto a PCB, ensuring reliable electrical connections in the system.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are normally off without a gate voltage, providing better control and power efficiency in various switching applications.

Maximum Pulsed Drain Current (IDM): 62.8 A

The high pulsed drain current rating allows this FET to handle peak current surges, making it suitable for high-performance applications with dynamic power requirements.

Avalanche Energy Rating (EAS): 170 mJ

The high avalanche energy rating indicates the FET's ability to withstand transient voltage spikes without breakdown, increasing the system's reliability in harsh environments.

Maximum Drain Current (Abs) (ID): 15.7 A

The high maximum drain current rating ensures that the FET can handle continuous current flow without overheating, making it suitable for power-hungry applications.

No. of Terminals: 3

The 3-terminal configuration simplifies the FET's connection to the circuit, reducing complexity and improving overall system reliability.

Maximum Power Dissipation (Abs): 30 W

The high power dissipation rating allows the FET to handle significant power without thermal issues, ensuring stable operation in demanding conditions.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides mechanical stability and efficient heat dissipation, enhancing the FET's performance in high-power applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency, low ON-resistance, and fast switching speeds, making this FET suitable for demanding power management tasks.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature rating allows the FET to operate reliably in elevated temperature environments, ensuring performance across a wide range of conditions.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency, making it ideal for power transistor applications requiring high performance and durability.

Terminal Finish: MATTE TIN

The matte tin finish offers good solderability and corrosion resistance, ensuring long-term electrical connections and stable performance in various operating conditions.

Maximum Drain-Source On Resistance: 0.07 ohm

The low ON-resistance allows the FET to minimize power loss and heat generation during operation, improving overall efficiency and performance in power management applications.

Terminal Position: SINGLE

The single terminal position simplifies the FET's installation and integration into the circuit, reducing assembly time and enhancing overall system reliability.

Case Connection: ISOLATED

The isolated case connection enhances electrical safety and minimizes the risk of short circuits or electrical interference, ensuring stable operation in demanding environments.

Technical Specifications

Power Field Effect Transistors (FET) FQPF20N06L attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

170 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

15.7 A

Maximum Drain Current (ID):

15.7 A

Maximum Drain-Source On Resistance:

.07 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

62.8 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQPF20N06L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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