Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 47 W; No. of Elements: 1; Qualification: Not Qualified;
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Rochester
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Chip1Stop
$2.540
$1.060
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$2.930
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$1.000
Mouser Electronics
$3.120
$1.300
Arrow
$0.968
$0.869
$0.845
Verical
Digiode
$0.942
Nova Conductors
$1.090
TME
$2.660
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$1.080
Component Electronics Inc.
$3.850
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$2.500
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NAC Semi
$4.330
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PC Components Company LLC
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$0.337
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Semicontronic
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Power Field Effect Transistors (FET) FQPF27P06 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor
Avalanche Energy Rating (EAS):
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JESD-609 Code:
No. of Elements:
No. of Terminals:
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Package Style (Meter):
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Maximum Power Dissipation (Abs):
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FQPF27P06 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
PCN Design/Specification - Postponed Qualification 27/Dec/2022 Logo 17/Aug/2017
PCN Assembly/Origin - Assembly/Test Site 14/Dec/2022
PCN Packaging - Mult Devices 24/Oct/2017 Tape and Box/Reel Barcode Update 07/Aug/2014
In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.
1N4148WS
Rochester Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
4554
Jw Miller Magnetics
Other Semiconductors;
1N4148WSF-7
Diodes Incorporated
1N4148WSF-7 by Diodes Inc. is a single silicon rectifier diode with max output current of 0.25A and max reverse voltage of 100V. It operates b/w -55 to 150°C, has a small outline package style, and is suitable for surface mount applications in various electronic circuits.
IRLML6401TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;
2N7002
Unisonic Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
BSS138DW-7-F
BSS138DW-7-F by Diodes Incorporated is a N-channel small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.2A and a max power dissipation of 0.2W.
USB2514BI-AEZG
Standard Microsystems
BUS CONTROLLER, UNIVERSAL SERIAL BUS; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 36; Package Code: HVQCCN; Package Shape: SQUARE;
ATMEGA328P-AU
Atmel
MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 32; Package Code: TQFP; Package Shape: SQUARE;
EU2B-YS3203F
Idec
ROTARY SWITCH;
LIS2DH12TR
STMicroelectronics
LIS2DH12TR by STMicroelectronics is a 3-axis accelerometer with digital voltage output. It operates b/w -40 to 85°C, with supply voltage range of 1.71-3.6V. Ideal for applications requiring precise motion sensing in compact spaces like wearables and IoT devices.
SMBJ18CA
Jgd Semiconductors
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V;
BAV99
Bkc Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Onsemi
LM358MX
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
International Components
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;
LM317T
Texas Instruments
LM317T by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. Operating temperature ranges from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. With a max output current of 1.5A, this through-hole package regulator is ideal for power supply designs where adjustable voltage levels are needed.
Weitron Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Micro Commercial Components
1N4148WT
Diotec Semiconductor Ag
IRFL9014PBF
Vishay Intertechnology
Vishay Intertechnology's IRFL9014PBF is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 14A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.5 ohm Drain-Source On Resistance and 3.1W Max Power Dissipation.
FDB035N10A
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 333 W; No. of Terminals: 2; Package Style (Meter): SMALL OUTLINE;
FDS2582
FDS2582 by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage. It features a built-in diode, 4.1A Drain Current, and 0.066 ohm On Resistance. Ideal for SWITCHING applications, this transistor operates in ENHANCEMENT MODE with an EAS of 252mJ and can handle up to 2.5W power dissipation.
SI7461DP-T1-GE3
Vishay Intertechnology's SI7461DP-T1-GE3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 8.6A Drain Current, and 0.0145 ohm On Resistance. Ideal for power management applications due to its 60A Pulsed Drain Current capability and 125mJ Avalanche Energy Rating in a small outline package.
AUIRF7759L2TR
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 375 A; No. of Elements: 1;
BSL606SNH6327XTSA1
Infineon Technologies
Infineon's BSL606SNH6327XTSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 18.1A IDM for automotive applications. It features a built-in diode, 0.06 ohm RDS(on), and operates in the -55 to 150°C temperature range, meeting AEC-Q101 standards.
IRFR9120NTRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .48 ohm;
SQM120P10-10M1L_GE3
Vishay Intertechnology's SQM120P10-10M1L_GE3 is a P-channel FET with 100V DS breakdown voltage, 480A IDM, and 0.0101 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
DMP3098L-7
DMP3098L-7 by Diodes Inc. is a P-channel power FET with a min DS breakdown voltage of 30V and max pulsed drain current of 11A. It is used for switching applications and operates in enhancement mode.
IRLML6401TRPBF-1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; No. of Elements: 1;
IRLML9301TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Operating Mode: ENHANCEMENT MODE; Terminal Finish: Matte Tin (Sn);
IRLML2060TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
IRFS4410ZTRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 230 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
STP11NK50ZFP
STP11NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 40A IDM, and 0.52 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation, 190mJ EAS rating, and ENHANCEMENT MODE operation at up to 150°C.
BBS3002-DL-1E
BBS3002-DL-1E by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, 400A IDM, and 0.009 ohm RDS(on). Ideal for power management applications due to its high drain current capacity and low on-resistance. Suitable for surface mount designs in various electronic systems requiring efficient power control.
FDD8424H_F085A
N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
CSD18563Q5A
CSD18563Q5A by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 96A IDM, and 0.0108 ohm RDS(on). With a max power dissipation of 116W, it operates in temperatures ranging from -55 to 150 °C.
IRF3205ZPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Pulsed Drain Current (IDM): 440 A; Case Connection: DRAIN;
NTP8G202NG
NTP8G202NG by Onsemi is a single N-channel Power FET with 9A max drain current and 65W max power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temperature up to 150°C ensures reliable performance in demanding environments.
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FQPF27P06
FQPF27P06 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 560mJ EAS, and 0.07 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 47W at 175°C.
FQPF13N50CF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 48 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 48 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): FLANGE MOUNT;
FQPF4N90C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 47 W; JESD-609 Code: e3; Terminal Position: SINGLE;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 47 W; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON;
FQPF5N60C
FQPF5N60C by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 18A IDM and 2.5ohm RDS(on). Its METAL-OXIDE SEMICONDUCTOR technology ensures reliable performance in ENHANCEMENT MODE operation up to 150°C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 33 W; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 18 A;
FQPF9P25
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Qualification: Not Qualified; No. of Terminals: 3;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; JESD-30 Code: R-PSFM-T3; No. of Elements: 1;
FQPF6N90C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56 W; Transistor Element Material: SILICON; JESD-30 Code: R-PSFM-T3;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56 W; Maximum Pulsed Drain Current (IDM): 24 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FQPF20N06L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Transistor Element Material: SILICON; No. of Terminals: 3;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 170 mJ;
FQPF13N50C-F105
FQPF13N50C-F105 by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, 52A IDM, and 860mJ EAS. Ideal for SWITCHING applications due to ENHANCEMENT MODE operation. RECTANGULAR package with THROUGH-HOLE terminals and METAL-OXIDE SEMICONDUCTOR technology.
FQPF13N50C_F105
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 48 W; No. of Terminals: 3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FQPF70N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 62 W; JESD-30 Code: R-PSFM-T3; Qualification: Not Qualified;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 62 W; Maximum Drain Current (Abs) (ID): 35 A; Package Style (Meter): FLANGE MOUNT;
FQPF7N65C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; Terminal Position: SINGLE; JEDEC-95 Code: TO-220AB;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; No. of Elements: 1; Case Connection: ISOLATED;
FQPF27N25
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Maximum Operating Temperature: 150 Cel; Minimum DS Breakdown Voltage: 250 V;
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