Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Featured manufacturers
FDP33N25 by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage. It has a max Drain Current of 33A and 0.094 ohm On Resistance, suitable for SWITCHING applications. With an IDM of 132A and EAS of 918mJ, it operates in ENHANCEMENT MODE at up to 150°C, making it ideal for high-power switching circuits.
Median Price
$2.520
Lifecycle Status
Suppliers In-Stock
26
In-Stock Inventory
1k+
Arrow
1+ parts
$1.226
100+ parts
$1.097
1k+ parts
$0.859
10k+ parts
$0.847
Rochester
$1.250
$1.230
$1.200
-
Farnell
$2.150
$0.976
$0.736
Chip1Stop
$1.050
$0.938
$0.925
Mouser Electronics
$2.920
$1.300
DigiKey
$1.304
$0.973
$0.882
Newark
$3.010
$1.340
$1.000
$0.908
Element14
$3.670
$1.670
$1.350
Verical
$1.104
EBV Elektronik
Avnet
Flip Electronics (Authorized)
Vyrian
$1.135
Digiode
$1.720
Maritex
$2.177
$1.312
$1.108
TME
$2.680
$1.220
Chip Stock
Cyclops Electronics Ltd
IBS Electronics
$1.079
$1.027
Bristol Electronics
Flip Electronics
NAC Semi
$4.960
$4.510
Nova Conductors
Ack Elektronik San.Tic.Ltd.Sti
LittleDiode
First Choice Components Inc.
Ampacity Inc.
$0.770
Corohmni
Corphita
$1.629
Microchip USA
$13.650
Kepictronics
RC Electronics
Kulean Microsystems
TANS Electronics
SupplyDigital Components
Netroflash
Supply Digital
Problanco Electronics
Authorized Procurement Solutions
UHIMA Technologies
Glotronic Ltd.
iodParts Technologies Inc.
The use of plastic/epoxy material in the package body ensures durability and reliability, making this FET a long-lasting choice.
N-Channel FETs typically have lower ON resistance and higher electron mobility, making them suitable for high-performance applications.
The built-in diode allows for more efficient energy transfer and helps protect the circuit from reverse current flow, enhancing the overall performance of the FET.
Designed specifically for switching applications, this FET delivers fast switching speeds and low ON resistance, making it ideal for power management in various electronic devices.
With a minimum breakdown voltage of 250 V, this FET can handle high voltage applications with ease, ensuring reliable operation under demanding conditions.
The rectangular package shape allows for easy mounting and efficient use of space on a circuit board, making the FET suitable for compact designs.
The high pulsed drain current rating of 132 A enables the FET to handle peak currents effectively, making it suitable for applications that require high power output.
The high avalanche energy rating of 918 mJ ensures that the FET can withstand transient voltage spikes, providing reliable protection for the circuit.
With a maximum drain current of 33 A, this FET can handle high currents without overheating, making it suitable for power-intensive applications.
The three terminals provide easy connections and flexibility in circuit design, allowing for versatile applications of the FET.
The high power dissipation rating of 235 W ensures that the FET can handle high power levels without thermal breakdown, making it reliable in demanding environments.
The flange mount package style allows for secure mounting on a heatsink or circuit board, enhancing heat dissipation and overall performance of the FET.
The metal-oxide semiconductor technology offers improved efficiency and reliability, making this FET a high-performance choice for various applications.
With a maximum operating temperature of 150°C, this FET can withstand high temperatures, ensuring stable performance in harsh environments.
Silicon has excellent thermal and electrical properties, making this FET reliable and efficient for a wide range of applications.
The matte tin finish with annealing provides good solderability and conductivity, ensuring reliable connections for the FET in the circuit.
The low drain-source on resistance of 0.094 ohm results in minimal power loss and improved efficiency, making this FET suitable for high-performance applications.
The single terminal position simplifies installation and circuit connections, making the FET easier to integrate into electronic devices.
Power Field Effect Transistors (FET) FDP33N25 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Additional Features:
Avalanche Energy Rating (EAS):
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
FDP33N25 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Postponed Qualification 27/Dec/2022 Logo 17/Aug/2017 Wafer Fab Change 27/Sep/2022
PCN Packaging - Mult Devices 24/Oct/2017 Tape and Box/Reel Barcode Update 07/Aug/2014
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148WT
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
RC0805FR-0710RL
Yageo
Yageo's RC0805FR-0710RL is a 10 ohm SMT fixed resistor with 1% tolerance and 0.125 W power dissipation. With a temperature range of -55 to 155 °C, it suits applications requiring precise resistance values in compact surface mount designs.
RC0402FR-0710KL
Yageo's RC0402FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance, suitable for applications requiring a rated power dissipation of 0.0625 W. With a temperature coefficient of 100 ppm/°C, it operates b/w -55 to 155 °C, making it ideal for various electronic circuits.
2N7002-7-F
SPC TECHNOLOGY/ MULTICOMP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
BSS138-TP
Micro Commercial Components
BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.
2N2222A
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
SMMBT3904LT1G
Onsemi
SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.
1N4148
Compensated Devices
RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;
General Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
RC0603FR-071KL
Yageo's RC0603FR-071KL is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in electronics, it operates b/w -55 to 155 °C with a temperature coefficient of 100 ppm/°C.
CSNF651
Honeywell Sensing And Control
CSNF651 by Honeywell Sensing And Control is an industrial-grade analog circuit with 3 terminals. It operates b/w -40 to 85°C, supporting supply voltages from -15V to 15V. Ideal for applications requiring a special shape rectangular package style and through-hole terminal form.
1N4148WS
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Formosa Microsemi
BAV99
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;
LM107H/883
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
0462-201-16141
TE Connectivity
TE Connectivity's 0462-201-16141 is a CRIMP terminal with MACHINED contact design. It operates b/w -55 to 125 °C, suitable for wire gauges from 20 to 16 AWG. With a rated current of 13A, it is ideal for applications requiring FEMALE ROUND PIN-SOCKET contacts.
LM358N
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
BAV99WT1G
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
KSZ9031RNXIA
Microchip Technology
KSZ9031RNXIA by Microchip is a 48-terminal Ethernet transceiver with data rate of 1000 Mbps. Operating temperature range from -40 to 85°C makes it suitable for industrial applications. This square-shaped chip carrier has a very thin profile and matte tin finish, ideal for network interfaces.
FDB33N25TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 235 W; Transistor Element Material: SILICON; Avalanche Energy Rating (EAS): 918 mJ;
DMPH3010LK3-13
Diodes Incorporated
Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
FDT439N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Qualification: Not Qualified; Transistor Element Material: SILICON;
FDP20N50F
FDP20N50F by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 1110mJ EAS, and 0.26 ohm RDS(on). With a max power dissipation of 250W and operating temperature of 150°C, it's suitable for high-power circuits requiring efficient switching capabilities.
IRF3205PBF
Infineon Technologies
IRF3205PBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage and 390A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in ENHANCEMENT MODE. With 0.008 ohm RDS(on), it can handle up to 75A ID current efficiently.
DMP3099L-7
DMP3099L-7 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage and 3.8A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a low on-resistance of 0.065 ohm. Suitable for surface mount designs with small outline package style.
RFD16N05LSM9A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; JEDEC-95 Code: TO-252AA; Terminal Form: GULL WING;
FDMC86102LZ
FDMC86102LZ by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 30A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.024 ohm RDS(on), and 41W Pdiss. Suitable for surface mount designs in various electronic systems requiring high power efficiency and reliability.
IRFR024NTRPBF
IRFR024NTRPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 71mJ EAS, and 0.075ohm RDS(ON). With a max power dissipation of 45W and operating temperature of 175°C, it's suitable for high-power electronic systems.
FDS6982AS_NL
Fairchild Semiconductor's FDS6982AS_NL is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 8.6A Max Drain Current. Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE up to 150°C.
BSZ097N04LSGATMA1
Infineon BSZ097N04LSGATMA1 is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for SWITCHING applications. Features include 160A IDM, 0.0142 ohm RDS(on), and 20mJ EAS rating. Operates in ENHANCEMENT MODE up to 175°C, with PLASTIC/EPOXY package and DUAL terminal position.
FDB52N20TM
FDB52N20TM by Onsemi is a power field effect transistor (FET) with a min DS breakdown voltage of 200V. It is an N-channel, single configuration transistor with a built-in diode, making it suitable for switching applications. With a max pulsed drain current of 208A and a max power dissipation of 357W, it offers high performance in a small outline package style.
BSP135H6327XTSA1
Infineon's BSP135H6327XTSA1 is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for DEPLETION MODE operation, it has 0.48A IDM and 0.12A ID. Widely used in automotive applications due to AEC-Q101 standard compliance and 150°C max operating temp.
FDD4685-F085P
FDD4685-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 32A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an Avalanche Energy Rating of 121mJ.
IRLML2244TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
FDN5618P
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
BSS138
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 240;
DMG2305UX-7
DMG2305UX-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage, 4.2A max drain current, and 0.052 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and 150°C operating temp. Features include single configuration with built-in diode, Gull Wing terminals, and small outline package style.
DMP3056LDM-7
DMP3056LDM-7 by Diodes Inc. is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 13A IDM, 0.045 ohm RDS(on), and 150°C Max Operating Temp. Its GULL WING terminals and SMALL OUTLINE package make it suitable for surface mount designs.
IRLML6401PBF
IRLML6401PBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 33mJ EAS. With ENHANCEMENT MODE operation, it has a -55 to 150 °C temperature range and 0.05 ohm RDS(on). Ideal for compact designs with its SMALL OUTLINE package style.
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FDP39N20
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 251 W; Avalanche Energy Rating (EAS): 860 mJ; Maximum Pulsed Drain Current (IDM): 156 A;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 251 W; Package Shape: RECTANGULAR; Terminal Position: SINGLE;
FDP3632
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 310 W; JESD-609 Code: e3; No. of Terminals: 3;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; No. of Terminals: 3;
FDP3652_NL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Qualification: Not Qualified; JESD-609 Code: e3;
FDP3652
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 100 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): FLANGE MOUNT;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; No. of Terminals: 3; Terminal Finish: MATTE TIN;
FDP3651U
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 255 W; Peak Reflow Temperature (C): NOT SPECIFIED; Minimum DS Breakdown Voltage: 100 V;
FDP3672
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 135 W; Maximum Operating Temperature: 175 Cel; Transistor Element Material: SILICON;
FDP3682
FDP3682 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 6A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.036 ohm On Resistance, and operates in ENHANCEMENT MODE.
FDP3205
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Operating Mode: ENHANCEMENT MODE; Terminal Finish: MATTE TIN;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 135 W; JEDEC-95 Code: TO-220AB; Terminal Form: THROUGH-HOLE;
FDP3632_NL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 310 W; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT;
FDP3672_NL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 135 W; JESD-609 Code: e3; Terminal Form: THROUGH-HOLE;
FDP3682_NL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 95 W; JEDEC-95 Code: TO-220AB; No. of Terminals: 3;
FDP3N50NZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 54 W; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDP33N25
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 235 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Supply Digital Components
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