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BD239TU

Onsemi

BD239TU by Onsemi

The Onsemi BD239TU is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 2A. With a min. DC current gain of 15, it's ideal for switching applications at up to 150 °C operating temperature in various electronic circuits. Its through-hole terminals make it suitable for flange mount package styles.

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Lifecycle Status

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1k+

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Digiode

USA . 2,586 parts In-Stock

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Vyrian

USA . 557 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,290 parts In-Stock

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SupplyDigital Components

Austria . 7,990 parts In-Stock

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Kulean Microsystems

USA . 7,114 parts In-Stock

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Problanco Electronics

Mexico . 4,448 parts In-Stock

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TANS Electronics

Latvia . 3,554 parts In-Stock

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Corphita

USA . 2,073 parts In-Stock

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Northwest PG Solutions

USA . 1,700 parts In-Stock

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UHIMA Technologies

Türkiye . 966 parts In-Stock

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Native Components

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Supply Digital

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Corohmni

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Overview

Enhance the performance of your electronic devices with the BD239TU power bipolar junction transistor by Onsemi. Known for their exceptional quality and reliability, Onsemi offers a wide range of applications for their products, making them a trusted choice among industry professionals. The BD239TU is designed for switching applications, providing efficient and seamless operation. With a maximum collector-emitter voltage of 45V and a maximum collector current of 2A, this transistor delivers optimal performance while maintaining a compact design. Upgrade your projects with the BD239TU and experience the value and benefits that Onsemi products bring to your work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Offers versatile use in various circuit designs and applications.

Configuration: SINGLE

Simplified design and ease of use for individual applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance.

Package Shape: RECTANGULAR

Compact shape that allows for easy integration into circuit boards.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto circuit boards for secure connections.

No. of Terminals: 3

Simplified connection setup with minimal terminals.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting onto surfaces for stable operation.

Minimum DC Current Gain (hFE): 15

Ensures consistent amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 45 V

Handles higher voltage levels for diverse applications.

Transistor Element Material: SILICON

Highly reliable and commonly used material for transistors.

Maximum Collector Current (IC): 2 A

Capable of handling higher currents for power applications.

Terminal Finish: MATTE TIN

Provides a durable finish for long-lasting connections.

Terminal Position: SINGLE

Simplified connection setup with a single terminal position.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD239TU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BD239TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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