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BD239ATU

Onsemi

BD239ATU by Onsemi

The Onsemi BD239ATU is a NPN BJT transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 30W and max collector current of 2A, it operates at up to 150°C. Its silicon element material and transition frequency of 3MHz make it suitable for various electronic circuits.

Median Price

$0.242

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,000 parts In-Stock

1+ parts

-

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$0.251

1k+ parts

$0.208

10k+ parts

$0.185

6,000

-

$0.251

$0.208

$0.185

Verical

USA . 2,000 parts In-Stock

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-

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$0.232

2,000

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-

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$0.232

Distributors (In-Stock)

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Digiode

USA . 3,308 parts In-Stock

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$0.196

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$0.196

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Vyrian

USA . 1,984 parts In-Stock

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$0.206

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1,984

$0.206

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Distributors (Availability)

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Corphita

USA . 1,883 parts In-Stock

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$0.185

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$0.185

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Corohmni

South Africa . 424 parts In-Stock

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$0.206

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424

$0.206

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Component Stockers USA

USA . 32 parts In-Stock

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$0.210

100+ parts

$0.200

1k+ parts

$0.180

10k+ parts

$0.180

32

$0.210

$0.200

$0.180

$0.180

QUARKTWIN TECHNOLOGY LTD

USA . 25,157 parts In-Stock

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TANS Electronics

Latvia . 7,751 parts In-Stock

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SupplyDigital Components

Austria . 7,677 parts In-Stock

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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Perfect Parts

USA . 2,384 parts In-Stock

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Northwest PG Solutions

USA . 2,232 parts In-Stock

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Supply Digital

USA . 1,847 parts In-Stock

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Problanco Electronics

Mexico . 1,167 parts In-Stock

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Kulean Microsystems

USA . 477 parts In-Stock

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UHIMA Technologies

Türkiye . 192 parts In-Stock

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Native Components

USA . 78 parts In-Stock

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Continental Prestige Electronics

USA . 50 parts In-Stock

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$0.187

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50

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$0.187

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Overview

Unlock the power of innovation with the BD239ATU by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor offers unparalleled quality and reliability. Ideal for switching applications, this NPN transistor delivers exceptional performance with a maximum collector current of 2A and a nominal transition frequency of 3 MHz. Its flange mount package style ensures easy installation, while its high DC current gain guarantees efficient operation. Trust Onsemi to provide cutting-edge solutions that surpass expectations. Elevate your projects with the BD239ATU and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material helps in keeping the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their high efficiency and fast switching speed.

Maximum Power Dissipation (Abs): 30 W

With a maximum power dissipation of 30W, this transistor can handle high power switching applications effectively.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliable performance even under elevated temperature conditions.

Maximum Collector-Emitter Voltage: 60 V

The 60V maximum collector-emitter voltage allows this transistor to be used in a wide range of voltage applications.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, this transistor is suitable for applications requiring high power switching.

Nominal Transition Frequency (fT): 3 MHz

The high nominal transition frequency of 3MHz indicates fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD239ATU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD239ATU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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