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BCW70LT1

Onsemi

BCW70LT1 by Onsemi

BCW70LT1 by Onsemi is a PNP BJT with 215 min hFE, 45V VCEO, and 0.1A IC. Ideal for small outline applications, it has Gull Wing terminals and operates up to 150°C. Suitable for surface mount designs requiring high DC current gain and low power dissipation.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,886 parts In-Stock

1+ parts

-

100+ parts

$0.038

1k+ parts

$0.031

10k+ parts

$0.028

5,886

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$0.038

$0.031

$0.028

Distributors (In-Stock)

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Digiode

USA . 487 parts In-Stock

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$0.029

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487

$0.029

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Chip Stock

USA . 20,000 parts In-Stock

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Pegasus Components GmbH

Germany . 18,000 parts In-Stock

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Standard Data Resources

USA . 15,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 12,000 parts In-Stock

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Vyrian

USA . 5,522 parts In-Stock

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Prism Electronics

USA . 5,200 parts In-Stock

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EMSNET

USA . 3,490 parts In-Stock

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Zilex Electronics Inc.

Canada . 3,000 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 2,340 parts In-Stock

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Bristol Electronics

USA . 2,000 parts In-Stock

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$0.113

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$0.034

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2,000

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$0.113

$0.034

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Microfarads

USA . 1,890 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,306 parts In-Stock

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Component Sense

UK . 599 parts In-Stock

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A2Z Electronics, Inc.

USA . 149 parts In-Stock

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Nova Conductors

Japan . 54 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 547 parts In-Stock

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$0.028

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547

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Component Stockers USA

USA . 4,138 parts In-Stock

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$0.030

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$0.030

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$0.030

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4,138

$0.030

$0.030

$0.030

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Corohmni

South Africa . 64 parts In-Stock

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$0.031

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64

$0.031

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Perfect Parts

USA . 65,428 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 32,269 parts In-Stock

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32,269

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,952 parts In-Stock

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TANS Electronics

Latvia . 6,717 parts In-Stock

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Kulean Microsystems

USA . 6,199 parts In-Stock

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SupplyDigital Components

Austria . 5,466 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,252 parts In-Stock

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Argo Parts USA

USA . 4,553 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,501 parts In-Stock

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Continental Prestige Electronics

USA . 3,209 parts In-Stock

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Problanco Electronics

Mexico . 1,123 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Assy Fe

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UHIMA Technologies

Türkiye . 519 parts In-Stock

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A-Plus Industry Inc.

USA . 100 parts In-Stock

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Overview

Experience the power of innovation with the BCW70LT1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. Manufactured by industry leader Onsemi, this PNP transistor is designed for a wide range of applications, from amplifiers to switching circuits. With a maximum collector-current rating of 0.1 A and a minimum DC current gain of 215, this transistor provides customers with a high level of efficiency and functionality. Trust in the expertise of Onsemi and elevate your projects with the BCW70LT1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making it suitable for different environments.

Polarity or Channel Type: PNP

Offers good amplification characteristics, allowing for efficient signal processing.

Configuration: SINGLE

Simplifies circuit design and integration, reducing complexity and improving reliability.

Surface Mount: YES

Enables easy installation on PCBs, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Fits well in compact electronic devices, optimizing overall design layout.

Terminal Form: GULL WING

Enhances heat dissipation and soldering connection, ensuring stable performance under various conditions.

No. of Terminals: 3

Provides essential connectivity options for versatile circuit configurations.

Maximum Power Dissipation (Abs): 0.225 W

Handles moderate power levels effectively, preventing overheating and damage.

Package Style (Meter): SMALL OUTLINE

Offers a convenient form factor for space-constrained applications.

Minimum DC Current Gain (hFE): 215

Ensures consistent and reliable amplification of input signals for precise output control.

Maximum Operating Temperature: 150 °C

Allows for operation in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 45 V

Supports a wide range of voltage levels for diverse circuit requirements.

Transistor Element Material: SILICON

Provides excellent semiconductor properties for efficient signal processing and amplification.

Maximum Collector Current (IC): 0.1 A

Handles moderate current levels with ease, ensuring stable operation under varying loads.

Terminal Finish: Tin/Lead (Sn/Pb)

Ensures reliable electrical connections and resistance to environmental factors.

Terminal Position: DUAL

Facilitates easy installation and connection in standard PCB layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Withstands peak reflow temperatures for efficient soldering processes.

Peak Reflow Temperature °C: 235

Supports high-temperature soldering methods for secure and robust connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW70LT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

215

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

BCW70LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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