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BC327-25RL1G

Onsemi

BC327-25RL1G by Onsemi

BC327-25RL1G by Onsemi is a PNP BJT transistor with hFE of 160, max VCE of 45V, and max IC of 0.8A. Ideal for amplifier applications due to its cylindrical package style, it can operate at up to 150°C and has a transition frequency of 260MHz.

Median Price

$0.159

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 4,390 parts In-Stock

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-

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$0.147

4,390

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$0.147

Rochester

USA . 2,140 parts In-Stock

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-

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$0.159

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$0.132

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$0.117

2,140

-

$0.159

$0.132

$0.117

DigiKey

USA . 2,140 parts In-Stock

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$0.200

2,140

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$0.200

Distributors (In-Stock)

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Nova Conductors

Japan . 47 parts In-Stock

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$0.083

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47

$0.083

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Digiode

USA . 845 parts In-Stock

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$0.124

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845

$0.124

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Chip Stock

USA . 44,000 parts In-Stock

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44,000

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LWI Electronics Inc

India . 18,500 parts In-Stock

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Freddi Giovanni

Italy . 17,500 parts In-Stock

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ComSIT Distribution GmbH

Germany . 12,150 parts In-Stock

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Magnum Semiconductors LLP

India . 9,439 parts In-Stock

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9,439

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DigiKey Marketplace

USA . 7,500 parts In-Stock

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7,500

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VNN

France . 7,496 parts In-Stock

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Vyrian

USA . 6,898 parts In-Stock

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6,898

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R&J Components

USA . 6,000 parts In-Stock

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Ashlea Components Ltd

UK . 4,831 parts In-Stock

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Martec Srl

Italy . 1,400 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 324 parts In-Stock

1+ parts

$0.081

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324

$0.081

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Argo Parts USA

USA . 3,420 parts In-Stock

1+ parts

$0.083

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$0.080

3,420

$0.083

-

-

$0.080

Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

$0.083

100+ parts

$0.079

1k+ parts

$0.075

10k+ parts

$0.074

300

$0.083

$0.079

$0.075

$0.074

Semicontronic

India . 6,713 parts In-Stock

1+ parts

$0.111

100+ parts

$0.108

1k+ parts

$0.108

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6,713

$0.111

$0.108

$0.108

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Ampacity Inc.

Singapore . 6,558 parts In-Stock

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$0.111

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6,558

$0.111

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Corphita

USA . 2,194 parts In-Stock

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$0.117

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2,194

$0.117

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Aztec Data Supply Inc.

USA . 1,565 parts In-Stock

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$1.052

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1,565

$1.052

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Perfect Parts

USA . 25,992 parts In-Stock

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Infinite Electronics LLP (Excess)

. 9,441 parts In-Stock

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TANS Electronics

Latvia . 7,775 parts In-Stock

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SupplyDigital Components

Austria . 7,574 parts In-Stock

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7,574

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Continental Prestige Electronics

USA . 7,500 parts In-Stock

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Kulean Microsystems

USA . 6,567 parts In-Stock

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Problanco Electronics

Mexico . 5,249 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,226 parts In-Stock

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Kepictronics

USA . 5,015 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,484 parts In-Stock

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UHIMA Technologies

Türkiye . 114 parts In-Stock

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114

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Overview

Unlock the power of efficient signal amplification with the BC327-25RL1G by Onsemi. This high-quality PNP Small Signal Bipolar Junction Transistor offers unparalleled performance and reliability for a wide range of amplifier applications. Manufactured by Onsemi, known for their cutting-edge technology and superior products, this transistor boasts a minimum DC current gain of 160 and a maximum operating temperature of 150°C. With a maximum collector-emitter voltage of 45V and a maximum collector current of 0.8A, the BC327-25RL1G provides customers with unmatched value, ensuring optimal performance and durability. Experience the difference with Onsemi's BC327-25RL1G - your ideal choice for all your amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP transistor circuits and designs.

Configuration: SINGLE

Simplified design and easier implementation in circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance.

Package Shape: ROUND

Compact design that saves space and allows for efficient placement on PCBs.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and secure connection on PCBs.

Maximum Power Dissipation (Abs): 0.625 W

High power dissipation capability ensures reliable performance under load.

Minimum DC Current Gain (hFE): 160

Consistent amplification of input signals with a high degree of accuracy.

Maximum Operating Temperature: 150 °C

Operates effectively in a wide range of temperature conditions for versatile use.

Maximum Collector-Emitter Voltage: 45 V

Handles high voltage levels without risk of breakdown or damage.

Maximum Collector Current (IC): 0.8 A

Suitable for applications requiring high levels of current.

Maximum Time At Peak Reflow Temperature: 40s

Durable construction allows for reliable performance during soldering processes.

Peak Reflow Temperature: 260C

Can withstand high temperature reflow soldering without degradation.

Nominal Transition Frequency (fT): 260 MHz

High frequency response allows for amplification of signals with minimal distortion.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC327-25RL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC327-25RL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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