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74HCT04DR2G

Onsemi

74HCT04DR2G by Onsemi

74HCT04DR2G by Onsemi is a CMOS logic gate with 6 functions, 26 ns propagation delay at 5V. It has a small outline package style, operates b/w -55 to 125 °C, and is suitable for military-grade applications requiring fast signal processing.

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 68,107 parts In-Stock

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$0.099

68,107

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$0.099

Rochester

USA . 64,967 parts In-Stock

1+ parts

-

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$0.119

1k+ parts

$0.099

10k+ parts

$0.088

64,967

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$0.119

$0.099

$0.088

Verical

USA . 41,037 parts In-Stock

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$0.110

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Nova Conductors

Japan . 99 parts In-Stock

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$0.087

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99

$0.087

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Digiode

USA . 784 parts In-Stock

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$0.093

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$0.093

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DigiKey Marketplace

USA . 68,107 parts In-Stock

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VNN

France . 25,534 parts In-Stock

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Chip Stock

USA . 7,080 parts In-Stock

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Vyrian

USA . 2,427 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 58,965 parts In-Stock

1+ parts

$0.083

100+ parts

$0.081

1k+ parts

$0.081

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-

58,965

$0.083

$0.081

$0.081

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Ampacity Inc.

Singapore . 58,832 parts In-Stock

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$0.083

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Argo Parts USA

USA . 964 parts In-Stock

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$0.087

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$0.084

964

$0.087

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$0.084

Corphita

USA . 770 parts In-Stock

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$0.088

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770

$0.088

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Corohmni

South Africa . 316 parts In-Stock

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$0.098

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AZTECH Wire

Italy . 981 parts In-Stock

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$13.660

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$13.660

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Aztec Data Supply Inc.

USA . 2,011 parts In-Stock

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$24.215

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Continental Prestige Electronics

USA . 68,107 parts In-Stock

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$0.085

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Kulean Microsystems

USA . 7,468 parts In-Stock

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Problanco Electronics

Mexico . 5,302 parts In-Stock

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TANS Electronics

Latvia . 4,095 parts In-Stock

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SupplyDigital Components

Austria . 2,283 parts In-Stock

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Microchip USA

USA . 339 parts In-Stock

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UHIMA Technologies

Türkiye . 216 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.085

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$0.083

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$0.081

100

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$0.085

$0.083

$0.081

Overview

Unlock the power of reliable logic gates with the 74HCT04DR2G by Onsemi. Manufactured with precision and expertise, this versatile component is perfect for a variety of applications. With a package body material of PLASTIC/EPOXY and 6 functions packed into a compact design, this product offers fast propagation delay at a nominal supply of 5V. Whether you're in the military, industrial, or consumer electronics sector, this logic gate provides exceptional value, efficiency, and performance to meet your needs. Trust Onsemi for quality components that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 26 ns

Fast propagation delay ensures quick response time for logic operations.

Surface Mount: YES

Surface mountable design allows for easy integration into PCBs and saves space.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard 5V power supplies, making it easy to power and use in existing systems.

Maximum Operating Temperature: 125 °C

High maximum operating temperature range allows for operation in a wide range of environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it energy efficient and reliable.

Technical Specifications

Logic Gates 74HCT04DR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HCT

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

26 ns

Propagation Delay (tpd):

26 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

74HCT04DR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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