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3EZ220D5RR1

Onsemi

3EZ220D5RR1 by Onsemi

The Onsemi 3EZ220D5RR1 is a Zener diode with a nominal reference voltage of 220V, max power dissipation of 1W, and max operating temperature of 200 °C. It is used in applications requiring precise voltage regulation such as power supplies and voltage references.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 752 parts In-Stock

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Vyrian

USA . 631 parts In-Stock

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Native Components

USA . 935 parts In-Stock

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$74.090

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$71.126

935

$74.090

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$71.126

Northwest PG Solutions

USA . 59 parts In-Stock

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$81.499

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59

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Problanco Electronics

Mexico . 8,351 parts In-Stock

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Kulean Microsystems

USA . 2,585 parts In-Stock

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TANS Electronics

Latvia . 1,038 parts In-Stock

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SupplyDigital Components

Austria . 736 parts In-Stock

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736

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UHIMA Technologies

Türkiye . 665 parts In-Stock

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Corphita

USA . 337 parts In-Stock

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Corohmni

South Africa . 131 parts In-Stock

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Overview

Discover the innovative 3EZ220D5RR1 Zener diode by Onsemi, a top-quality product that guarantees reliable performance and durability. Manufactured by Onsemi, a trusted name in the industry known for their cutting-edge technology and superior products, this Zener diode is perfect for a wide range of applications. Offering a nominal reference voltage of 220V and a maximum power dissipation of 1W, this diode ensures precise voltage regulation and protection against voltage spikes. Experience the value and benefits of this high-quality product that provides customers with peace of mind and consistent performance in their electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various electronic applications.

Working Test Current: 3.4 mA

The low working test current of 3.4 mA ensures efficient and reliable performance of the zener diode.

Maximum Voltage Tolerance: 5%

With a maximum voltage tolerance of 5%, this zener diode provides accurate voltage regulation, making it a dependable choice for electronic circuits.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature of 200 °C allows the zener diode to withstand elevated temperatures without compromising performance.

Maximum Power Dissipation: 1 W

The zener diode's maximum power dissipation of 1 W ensures it can handle moderate power levels, making it suitable for various applications.

Nominal Reference Voltage: 220 V

With a nominal reference voltage of 220 V, this zener diode is ideal for regulating voltage in electronic circuits requiring a specific voltage level.

Technical Specifications

Zener Diodes 3EZ220D5RR1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

1600 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

220 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

3.4 mA

Trade Compliance

3EZ220D5RR1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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