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3EZ24D5RR2

Onsemi

3EZ24D5RR2 by Onsemi

The Onsemi 3EZ24D5RR2 is a Zener diode with a nominal reference voltage of 24V and max power dissipation of 1W. It operates in temperatures ranging from -65 to 200 °C and has a max voltage tolerance of 5%. Ideal for applications requiring stable voltage regulation, such as power supplies and voltage references.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 701 parts In-Stock

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Digiode

USA . 636 parts In-Stock

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Native Components

USA . 422 parts In-Stock

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$0.309

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Northwest PG Solutions

USA . 1,333 parts In-Stock

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$0.340

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SupplyDigital Components

Austria . 5,601 parts In-Stock

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Kulean Microsystems

USA . 4,597 parts In-Stock

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TANS Electronics

Latvia . 3,679 parts In-Stock

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Problanco Electronics

Mexico . 935 parts In-Stock

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UHIMA Technologies

Türkiye . 922 parts In-Stock

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Corphita

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Corohmni

South Africa . 266 parts In-Stock

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Overview

Elevate your electronic designs with the reliable 3EZ24D5RR2 Zener Diode by Onsemi. Crafted from high-quality materials, this single-configured diode offers a nominal reference voltage of 24V with a maximum voltage tolerance of 5%. Perfect for a wide range of applications, this Zener diode ensures stable and efficient performance in any circuit. Trust in Onsemi's reputation for excellence and innovation, and experience the value and benefits this product brings to your projects. Choose the 3EZ24D5RR2 for superior quality and peace of mind in your electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it long-lasting and reliable in various environments.

Working Test Current: 31 mA

Allows for efficient and stable operation at a specified current level, ensuring consistent performance.

Maximum Voltage Tolerance: 5 %

Ensures precision and accuracy in voltage regulation, making it suitable for applications requiring tight voltage control.

Maximum Operating Temperature: 200 °C

Can withstand high temperatures, enabling use in demanding industrial or automotive environments.

Maximum Power Dissipation: 1 W

Offers high power handling capability, making it suitable for applications requiring higher power dissipation.

Nominal Reference Voltage: 24 V

Provides a stable reference voltage, ideal for voltage regulation and protection in electronic circuits.

Technical Specifications

Zener Diodes 3EZ24D5RR2 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

9 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

24 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

31 mA

Trade Compliance

3EZ24D5RR2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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