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3EZ220D5RL

Onsemi

3EZ220D5RL by Onsemi

3EZ220D5RL by Onsemi is a Zener diode with 220V nominal reference voltage, 5% max voltage tolerance, and 1W max power dissipation. It operates at up to 200 °C and has a max dynamic impedance of 1600 ohm. Ideal for applications requiring precise voltage regulation in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,917 parts In-Stock

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Vyrian

USA . 321 parts In-Stock

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Native Components

USA . 773 parts In-Stock

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$133.060

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$127.738

773

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$127.738

Northwest PG Solutions

USA . 1,279 parts In-Stock

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$146.366

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Problanco Electronics

Mexico . 7,176 parts In-Stock

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Kulean Microsystems

USA . 6,491 parts In-Stock

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TANS Electronics

Latvia . 4,840 parts In-Stock

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SupplyDigital Components

Austria . 1,313 parts In-Stock

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Corphita

USA . 1,017 parts In-Stock

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UHIMA Technologies

Türkiye . 526 parts In-Stock

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Corohmni

South Africa . 85 parts In-Stock

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Overview

Looking for a reliable and high-quality Zener diode? Look no further than the 3EZ220D5RL by Onsemi. With a reputation for excellence in manufacturing, Onsemi delivers products that meet the highest standards in the industry. This Zener diode is perfect for applications requiring precise voltage regulation and protection against voltage spikes. Trust Onsemi to provide you with a product that offers exceptional value, reliability, and performance. Choose the 3EZ220D5RL and experience the advantages of using top-notch components in your electronic designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, making it suitable for various environments.

Working Test Current: 3.4 mA

The low working test current of 3.4 mA ensures efficient operation and reduced power consumption.

Maximum Voltage Tolerance: 5 %

With a maximum voltage tolerance of 5%, this Zener diode offers precise voltage regulation, ensuring stable performance.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature of 200 °C allows the diode to function reliably in elevated temperature conditions.

Maximum Power Dissipation: 1 W

The diode's maximum power dissipation of 1 W indicates its capability to handle high power levels without damage.

Nominal Reference Voltage: 220 V

The 220 V nominal reference voltage makes this Zener diode ideal for applications requiring precise voltage regulation at this specific level.

Technical Specifications

Zener Diodes 3EZ220D5RL attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

1600 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

220 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

3.4 mA

Trade Compliance

3EZ220D5RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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