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2N5060RLRMG

Onsemi

2N5060RLRMG by Onsemi

2N5060RLRMG by Onsemi is a SCR with max DC gate trigger current of 0.2 mA, non-repetitive peak on-state current of 10 A, and max on-state current of 0.51 A. It is used in applications requiring reliable switching at temperatures ranging from -40 to 110 °C.

Median Price

$0.160

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 400 parts In-Stock

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$0.160

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400

$0.160

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DF Sales Co.

USA . 400 parts In-Stock

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$0.160

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400

$0.160

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Vyrian

USA . 6,632 parts In-Stock

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6,632

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Digiode

USA . 1,514 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 366 parts In-Stock

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$0.160

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366

$0.160

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AZTECH Wire

Italy . 882 parts In-Stock

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$8.950

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882

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Native Components

USA . 355 parts In-Stock

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$46.315

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$44.463

355

$46.315

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$44.463

Northwest PG Solutions

USA . 369 parts In-Stock

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$50.947

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369

$50.947

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Component Stockers USA

USA . 535 parts In-Stock

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$99.990

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Perfect Parts

USA . 8,307 parts In-Stock

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SupplyDigital Components

Austria . 5,598 parts In-Stock

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TANS Electronics

Latvia . 3,222 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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Problanco Electronics

Mexico . 2,190 parts In-Stock

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Kulean Microsystems

USA . 1,717 parts In-Stock

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Corphita

USA . 1,625 parts In-Stock

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UHIMA Technologies

Türkiye . 684 parts In-Stock

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684

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Overview

Enhance your electronic projects with the reliable and high-quality 2N5060RLRMG SCR by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and durability in all their products. The 2N5060RLRMG is perfect for a wide range of applications due to its innovative design and versatility. Experience seamless operation and efficiency with this SCR, providing you with unparalleled value and benefits. Upgrade your projects today with the 2N5060RLRMG and see the difference it can make!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and helps in preventing any electrical leakages, making the product safe to use.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for precise control over the operation of the SCR, ensuring reliable performance.

Configuration: SINGLE

Single configuration simplifies the circuit design and integration of the SCR into various systems.

Non Repetitive Peak On-state Current: 10 A

High non-repetitive peak current capability allows the SCR to handle sudden surges in current without damage.

Package Shape: ROUND

Round package shape provides uniform stress distribution and better thermal performance.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure secure connections and ease of soldering during installation.

Maximum On-state Current: 0.51 A

High on-state current rating allows the SCR to handle higher loads with efficiency.

Maximum Leakage Current: 0.01 mA

Low leakage current ensures minimal power loss when the SCR is in the off-state, leading to energy efficiency.

Repetitive Peak Reverse Voltage: 30 V

A high repetitive peak reverse voltage rating ensures protection against voltage spikes and reverse current flow.

No. of Terminals: 3

Having three terminals allows for easy connectivity in various circuit configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides mechanical robustness and ease of mounting the SCR in different applications.

Maximum Operating Temperature: 110 °C

High operating temperature rating ensures the SCR can withstand elevated temperatures without performance degradation.

Trigger Device Type: SCR

SCRs are known for their reliability, long lifespan, and ruggedness, making them suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

Low operating temperature rating allows the SCR to perform reliably even in extreme cold conditions.

Terminal Finish: TIN SILVER COPPER

This terminal finish provides good conductivity, corrosion resistance, and solderability for long-lasting connections.

Terminal Position: BOTTOM

Bottom terminal position makes installation and connection easier, especially in crowded or compact spaces.

Maximum RMS On-state Current: 0.8 A

High RMS on-state current rating ensures stable operation under continuous load conditions.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage ensures efficient control and switching of the SCR with minimal power consumption.

Repetitive Peak Off-state Voltage: 30 V

High repetitive peak off-state voltage rating provides protection against reverse voltage spikes and ensures reliable performance.

Maximum Holding Current: 5 mA

High holding current ensures the SCR remains latched in the on-state, providing stability during continuous operation.

Nominal Circuit Commutated Turn-off Time: 10 us

Low turn-off time allows for quick switching and response times in the circuit, enhancing performance efficiency.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures the SCR can withstand the soldering process without any damage.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N5060RLRMG attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Additional Features:

SENSITIVE GATE

Nominal Circuit Commutated Turn-off Time:

10 us

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.51 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

30 V

Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N5060RLRMG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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