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2N3845

Onsemi

2N3845 by Onsemi

The Onsemi 2N3845 is a NPN BJT transistor with a max collector-emitter voltage of 30V and max current of 0.1A. It has a min DC current gain of 60, making it suitable for amplifier applications up to 120MHz frequency range. The package style is cylindrical with plastic/epoxy body material and wire terminals at the bottom.

Median Price

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Lifecycle Status

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Digiode

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Vyrian

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ACDS - Activité Composants Distribution Service

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LittleDiode

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Kulean Microsystems

USA . 7,721 parts In-Stock

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Problanco Electronics

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TANS Electronics

Latvia . 6,002 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 1,569 parts In-Stock

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Native Components

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Northwest PG Solutions

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Corohmni

South Africa . 452 parts In-Stock

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UHIMA Technologies

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Overview

Unlock the power of precision and reliability with the Onsemi 2N3845 Small Signal Bipolar Junction Transistor. Crafted by a reputable manufacturer, this NPN transistor offers unparalleled performance in amplifier applications. Its durable plastic/epoxy package ensures longevity, while its high DC current gain and low power dissipation deliver optimal efficiency. Trust the 2N3845 to enhance your electronic projects with seamless functionality and exceptional value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent protection for the transistor, making it durable and able to withstand harsh operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, making this transistor versatile for various applications.

Configuration: SINGLE

Single configuration transistors are easier to work with and design into circuits, making them suitable for simpler applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals accurately.

Package Shape: ROUND

The round package shape allows for easy mounting and soldering, making it convenient for assembly in circuits.

Terminal Form: WIRE

Wire terminals provide a secure connection and ease of installation in circuits, ensuring reliable operation.

Maximum Power Dissipation: 0.2 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating, ensuring reliability in operation.

Maximum Collector-Emitter Voltage: 30 V

The high maximum collector-emitter voltage allows for the transistor to handle higher voltage levels, making it suitable for a wide range of applications.

Maximum Collector Current: 0.1 A

The high maximum collector current rating allows the transistor to handle higher current loads, making it versatile for different circuit requirements.

Nominal Transition Frequency: 120 MHz

With a high transition frequency, this transistor is suitable for high-frequency applications, ensuring excellent performance in amplifying high-speed signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3845 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3845 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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