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1N5941BRLG

Onsemi

1N5941BRLG by Onsemi

1N5941BRLG by Onsemi is a Zener Diode with 47V Nominal Voltage, 8mA Test Current, and 67 ohm Dynamic Impedance. Ideal for voltage regulation in electronic circuits due to its unidirectional polarity and silicon diode element material. Operates b/w -65 to 200 °C with a power dissipation of 1W in isolated case connection.

Median Price

$0.128

Lifecycle Status

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16

In-Stock Inventory

1k+

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Adafruit Industries

USA . 500 parts In-Stock

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$0.076

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$0.069

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$0.062

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$0.076

$0.069

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Farnell

UK . 78,406 parts In-Stock

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$0.513

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$0.251

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$0.122

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$0.112

78,406

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$0.112

Element14

Singapore . 579 parts In-Stock

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$0.770

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$0.423

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$0.238

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$0.219

579

$0.770

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Rochester

USA . 74,496 parts In-Stock

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$0.130

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$0.107

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$0.096

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Verical

USA . 57,207 parts In-Stock

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Chip1Stop

Japan . 114 parts In-Stock

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Flip Electronics

USA . 6,000 parts In-Stock

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$0.070

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$0.070

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Digiode

USA . 1,462 parts In-Stock

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Bristol Electronics

USA . 2,255 parts In-Stock

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$0.480

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$0.240

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$0.096

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DigiKey Marketplace

USA . 80,679 parts In-Stock

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Chip Stock

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Vyrian

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ACDS - Activité Composants Distribution Service

France . 2,755 parts In-Stock

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Dan-Mar Components

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ComSIT Distribution GmbH

Germany . 719 parts In-Stock

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ComSIT USA

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Corphita

USA . 2,055 parts In-Stock

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$0.068

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.076

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$0.069

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$0.062

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$0.076

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Corohmni

South Africa . 58 parts In-Stock

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$0.111

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Continental Prestige Electronics

USA . 86,679 parts In-Stock

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$0.461

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$0.226

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AZTECH Wire

Italy . 1,066 parts In-Stock

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$21.320

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Native Components

USA . 898 parts In-Stock

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Northwest PG Solutions

USA . 473 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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TANS Electronics

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ChipstoGo Electronic ltd

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Kulean Microsystems

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SupplyDigital Components

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 344 parts In-Stock

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Overview

Unlock the power of precision with the 1N5941BRLG Zener Diode by Onsemi. Crafted with quality and expertise, this diode offers unmatched performance and reliability for a variety of applications. Whether you're looking to regulate voltage or protect circuits, this diode delivers exceptional value and benefits to customers. Trust in Onsemi's reputation for excellence and choose the 1N5941BRLG for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the diode durable and resistant to environmental factors, ensuring a longer lifespan.

Working Test Current: 8 mA

The high working test current of 8 mA allows for reliable and stable performance in various applications.

Maximum Voltage Tolerance: 5 %

The low maximum voltage tolerance of 5% ensures accurate and precise voltage regulation, making it suitable for critical applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature of 200°C, this diode can withstand high temperature environments without compromising performance.

Maximum Power Dissipation: 1 W

The diode's maximum power dissipation of 1 W allows it to handle high power applications with ease, making it a versatile choice.

Diode Type: ZENER DIODE

Being a Zener diode, it provides precise voltage regulation and stability, making it ideal for voltage reference and regulation applications.

Nominal Reference Voltage: 47 V

The nominal reference voltage of 47 V makes this diode suitable for applications requiring a stable reference voltage at this specific value.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the diode only allows current to flow in one direction, providing reliable protection and regulation in circuit designs.

Technical Specifications

Zener Diodes 1N5941BRLG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

67 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

47 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

8 mA

Trade Compliance

1N5941BRLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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