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BZX84C4V7LT1G

Onsemi

BZX84C4V7LT1G by Onsemi

BZX84C4V7LT1G by Onsemi is a Zener diode with a nominal reference voltage of 4.7 V and max power dissipation of 0.25 W. It operates in temperatures ranging from -65 to 150 °C and has a max dynamic impedance of 80 ohm. Ideal for applications requiring precise voltage regulation in compact electronic devices due to its small outline package style and unidirectional polarity.

Median Price

$0.074

Lifecycle Status

Suppliers In-Stock

53

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1k+

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Chip1Stop

Japan . 123,188 parts In-Stock

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Arrow

USA . 5 parts In-Stock

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$0.163

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$0.060

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$0.163

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Newark

USA . 18,066 parts In-Stock

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$0.166

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$0.066

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$0.044

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Mouser Electronics

USA . 65,688 parts In-Stock

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Future Electronics

Canada . 1,608,000 parts In-Stock

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EBV Elektronik

Germany . 1,089,000 parts In-Stock

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Avnet

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DigiKey

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Farnell

UK . 40,962 parts In-Stock

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Element14

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Rochester

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Digiode

USA . 958 parts In-Stock

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Bristol Electronics

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Maritex

Poland . 1,425 parts In-Stock

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TME

Poland . 713 parts In-Stock

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Component Electronics Inc.

Canada . 300 parts In-Stock

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Nova Conductors

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PC Components Company LLC

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Sensible Micro Corp

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Semicontronic

India . 187,787 parts In-Stock

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Ampacity Inc.

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Corohmni

South Africa . 108 parts In-Stock

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Corphita

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Advanced Electronics

New Zealand . 60 parts In-Stock

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Continental Prestige Electronics

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Modulus Dynamics

Lithuania . 650 parts In-Stock

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Aztec Data Supply Inc.

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Aranea Global

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Perfect Parts

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Brazil . 23,352 parts In-Stock

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Lucentia Tech

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Overview

Discover the reliability and precision of the BZX84C4V7LT1G Zener Diode by Onsemi. Manufactured with cutting-edge technology, this small outline diode offers a nominal reference voltage of 4.7V and a maximum voltage tolerance of 6.38%, ensuring consistent performance in various applications. Whether you're designing circuit protection systems or voltage regulation circuits, this Zener diode provides unmatched quality and efficiency. Trust Onsemi to deliver top-notch components that meet your needs and exceed your expectations. Upgrade your projects with the BZX84C4V7LT1G and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the Zener diode, making it a reliable choice.

Config: SINGLE

The single configuration simplifies the installation and use of the Zener diode, making it user-friendly and easy to implement in electronic circuits.

Working Test Current: 5 mA

The 5 mA working test current ensures optimal performance and stability of the Zener diode in various applications.

Surface Mount: YES

With surface mount capability, this Zener diode can be easily mounted onto a circuit board, saving space and facilitating assembly in electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement and secure mounting of the Zener diode, optimizing space utilization in electronic designs.

No. of Terminals: 3

The 3 terminals provide convenient connectivity options for incorporating the Zener diode into various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers a compact and lightweight design, ideal for compact electronic devices and applications.

Maximum Voltage Tolerance: 6.38 %

The 6.38% maximum voltage tolerance ensures precise and reliable voltage regulation, making this Zener diode suitable for critical applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this Zener diode can withstand elevated temperatures, enhancing its durability and performance in demanding environments.

Maximum Dynamic Impedance: 80 ohm

The low 80 ohm maximum dynamic impedance allows for efficient voltage regulation and stable operation of the Zener diode in diverse electronic circuits.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65°C ensures reliable performance even in extreme cold conditions, making this Zener diode versatile and adaptable.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and conductivity, ensuring secure connections and optimal performance of the Zener diode.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and installation, allowing for versatile applications of the Zener diode.

Maximum Power Dissipation: 0.25 W

With a maximum power dissipation of 0.25 W, this Zener diode can effectively handle power loads, making it suitable for various high-power applications.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum time at peak reflow temperature of 260°C ensures reliable soldering of the Zener diode during assembly, enhancing its durability and performance.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for efficient soldering of the Zener diode onto circuit boards, facilitating secure and stable connections.

Reference Standard: UL RECOGNIZED

The UL recognized reference standard certifies the quality and safety of this Zener diode, making it a trustworthy and compliant choice for electronic applications.

Diode Type: ZENER DIODE

As a Zener diode, this product offers precise voltage regulation and stability, making it essential for voltage reference and protection circuits in various applications.

Nominal Reference Voltage: 4.7 V

With a nominal reference voltage of 4.7 V, this Zener diode provides accurate voltage regulation, making it suitable for a wide range of electronic devices and circuits.

Technology: ZENER

The Zener technology employed in this diode ensures reliable and consistent voltage regulation, enhancing its performance and efficiency in electronic circuits.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy and secure attachment of the Zener diode to circuit boards, ensuring stable connections and reliable performance.

Polarity: UNIDIRECTIONAL

The unidirectional polarity of this Zener diode ensures consistent and controlled voltage regulation in a single direction, enhancing its reliability and usability.

Diode Element Material: SILICON

The silicon diode element material offers excellent electrical properties and reliability, ensuring long-term performance and stability of this Zener diode.

Technical Specifications

Zener Diodes BZX84C4V7LT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

80 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

4.7 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

6.38 %

Working Test Current:

5 mA

Trade Compliance

BZX84C4V7LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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