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1N5932B

Onsemi

1N5932B by Onsemi

1N5932B by Onsemi is a Zener diode with a nominal reference voltage of 20V, max power dissipation of 1W, and working test current of 18.7mA. It is commonly used in applications requiring voltage regulation such as power supplies and voltage references due to its unidirectional polarity and silicon diode element material.

Median Price

$1.475

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 198 parts In-Stock

1+ parts

$2.820

100+ parts

$2.620

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198

$2.820

$2.620

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Verical

USA . 32,000 parts In-Stock

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$0.130

32,000

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$0.130

Distributors (In-Stock)

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Digiode

USA . 261 parts In-Stock

1+ parts

$2.679

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261

$2.679

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Nova Conductors

Japan . 750 parts In-Stock

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$2.794

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750

$2.794

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Vyrian

USA . 15,867 parts In-Stock

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Carlin Systems, Inc.

USA . 3,500 parts In-Stock

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3,500

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R&J Components

USA . 731 parts In-Stock

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731

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Distributors (Availability)

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Ampacity Inc.

Singapore . 15,820 parts In-Stock

1+ parts

$0.081

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15,820

$0.081

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Corohmni

South Africa . 185 parts In-Stock

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$0.095

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185

$0.095

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Corphita

USA . 757 parts In-Stock

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$2.538

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757

$2.538

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Continental Prestige Electronics

USA . 6,650 parts In-Stock

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$2.794

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$2.738

6,650

$2.794

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$2.738

Argo Parts USA

USA . 3,637 parts In-Stock

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$2.794

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3,637

$2.794

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Netroflash

USA . 100 parts In-Stock

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$2.794

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$2.654

10k+ parts

$2.598

100

$2.794

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$2.654

$2.598

Microchip USA

USA . 7,863 parts In-Stock

1+ parts

$19.700

100+ parts

$19.570

1k+ parts

$19.510

10k+ parts

$19.450

7,863

$19.700

$19.570

$19.510

$19.450

Metaverse IC Inc.

Canada . 66,818 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,925 parts In-Stock

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7,925

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Problanco Electronics

Mexico . 4,195 parts In-Stock

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TANS Electronics

Latvia . 3,601 parts In-Stock

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Kulean Microsystems

USA . 1,594 parts In-Stock

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1,594

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SupplyDigital Components

Austria . 1,145 parts In-Stock

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UHIMA Technologies

Türkiye . 117 parts In-Stock

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Assy Fe

Spain . 25 parts In-Stock

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Overview

Discover the power of the 1N5932B Zener Diode by Onsemi, a top-quality product designed to meet your electronic needs. With Onsemi's reputation for excellence in manufacturing, you can trust in the reliability and durability of this component. Ideal for applications requiring voltage regulation, the 1N5932B offers precise performance and consistent results. Ensure smooth operation and protect your circuitry with the value and benefits that this Zener Diode provides. Upgrade your projects today with the 1N5932B from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Working Test Current: 18.7 mA

Efficiently operates at a moderate current, ensuring reliability in performance.

Maximum Voltage Tolerance: 5 %

Offers precise voltage regulation, crucial for maintaining stability in circuits.

Maximum Power Dissipation: 1 W

Capable of handling high power dissipation, indicating a robust and long-lasting component.

Nominal Reference Voltage: 20 V

Provides a consistent reference voltage of 20V, suitable for specific circuit requirements.

Technical Specifications

Zener Diodes 1N5932B attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

14 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

20 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

18.7 mA

Trade Compliance

1N5932B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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