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1N5932B

Daco Semiconductor

1N5932B by Daco Semiconductor

ZENER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Median Price

$1.475

Lifecycle Status

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7

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Mouser Electronics

USA . 198 parts In-Stock

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Verical

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Digiode

USA . 261 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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Vyrian

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Carlin Systems, Inc.

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Ampacity Inc.

Singapore . 15,820 parts In-Stock

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Corohmni

South Africa . 185 parts In-Stock

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Corphita

USA . 757 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Netroflash

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Microchip USA

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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TANS Electronics

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Kulean Microsystems

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SupplyDigital Components

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UHIMA Technologies

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Assy Fe

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Technical Specifications

Zener Diodes 1N5932B attributes and parameters. Explore more Zener Diodes devices from Daco Semiconductor

Specs

Additional Features:

INDUSTRY STANDARD

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

14 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-XALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

20 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Tolerance:

5 %

Working Test Current:

18.7 mA

Trade Compliance

1N5932B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Daco Semiconductor

DACO, established in 1994 , is the pioneer and innovative manufacturer of wafer and module device assembly in Taiwan dedicated in the designing, manufacturing of superior Semiconductor products covering discrete parts and modules of IGBT , SiC (Silicon Carbide) Diode , SiC (Silicon Carbide) MOSFET, Silicon Diode, Schottky, MOSFET and Thyristor. Cutting Edge Technology and Performance: The founder of DACO, who comes from the Semiconductor Research Center of National Science Council in Taiwan, is experienced in the fabrication of Metal Gat IC, Poly Gat IC, Power MOS, and Sipos GPP wafer. With the excellent technology, he has been leading DACO in an outstanding position in the trend of advanced technology in power electronic semiconductors. For the past years, DACO had been maintaining collaborative relationship with the companies serving military applications in researching and manufacturing high power rectifier modules on military specifications. In the recent years, our R&D team has been developing cutting edge technology to obtain various patents, and implementing vertical technology to upgrade the service to customers.

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