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BZX84C11LT1G

Onsemi

BZX84C11LT1G by Onsemi

BZX84C11LT1G by Onsemi is a Zener diode with 11V nominal reference voltage, 5mA test current, and 20 ohm dynamic impedance. It is used in applications requiring precise voltage regulation, such as power supplies and voltage references. This small outline package diode operates b/w -65 to 150°C with a max power dissipation of 0.25W.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

38

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 20 parts In-Stock

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$0.037

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20

$0.037

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$0.035

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DigiKey

USA . 62 parts In-Stock

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$0.160

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$0.060

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$0.038

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$0.026

62

$0.160

$0.060

$0.038

$0.026

Rochester

USA . 429,838 parts In-Stock

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$0.036

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Verical

USA . 270,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 103,600 parts In-Stock

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Canada . 45,000 parts In-Stock

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Master Electronics

USA . 39,000 parts In-Stock

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Element14

Singapore . 37,699 parts In-Stock

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Farnell

UK . 37,699 parts In-Stock

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Arrow

USA . 30,000 parts In-Stock

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Chip1Stop

Japan . 2,352 parts In-Stock

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Distributors (In-Stock)

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Greenchips

USA . 300 parts In-Stock

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Freelance Electronics

USA . 2,180 parts In-Stock

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Digiode

USA . 368 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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TME

Poland . 669 parts In-Stock

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669

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Bristol Electronics

USA . 81,344 parts In-Stock

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Maritex

Poland . 5,216 parts In-Stock

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Vyrian

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IBS Electronics

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Dan-Mar Components

USA . 79,119 parts In-Stock

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NAC Semi

USA . 54,000 parts In-Stock

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ComSIT Distribution GmbH

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ACDS - Activité Composants Distribution Service

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LIBRA Elektronik GmbH

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Lantek

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Classic Components Corporation

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Prism Electronics

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Semi Source

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Martec Srl

Italy . 1,515 parts In-Stock

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Component Sense

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Speed Components Ltd

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Sogenti Electronics

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Resion

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Corohmni

South Africa . 457 parts In-Stock

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Ampacity Inc.

Singapore . 115,663 parts In-Stock

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Semicontronic

India . 115,151 parts In-Stock

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Corphita

USA . 2,281 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,935 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Argo Parts USA

USA . 3,408 parts In-Stock

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Advanced Electronics

New Zealand . 20 parts In-Stock

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Component Stockers USA

USA . 2,689 parts In-Stock

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Perfect Parts

USA . 1,234,551 parts In-Stock

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Component Connect

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iBuyXS LLC

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Continental Prestige Electronics

USA . 433,338 parts In-Stock

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Eastek

USA . 132,000 parts In-Stock

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Authorized Procurement Solutions

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Glotronic Ltd.

UK . 79,200 parts In-Stock

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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SupplyDigital Components

Austria . 7,259 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 6,143 parts In-Stock

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GreenTree Electronics

Israel . 6,000 parts In-Stock

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Problanco Electronics

Mexico . 5,592 parts In-Stock

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TANS Electronics

Latvia . 4,169 parts In-Stock

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Robosynatics

Brazil . 900 parts In-Stock

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Lucentia Tech

USA . 900 parts In-Stock

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Kulean Microsystems

USA . 382 parts In-Stock

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UHIMA Technologies

Türkiye . 26 parts In-Stock

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Overview

Discover the power of the BZX84C11LT1G by Onsemi, a high-quality Zener diode that offers unmatched reliability and precision. Manufactured by Onsemi, a trusted name in the industry, this component is perfect for a wide range of applications. From voltage regulation to signal processing, this Zener diode delivers exceptional performance and efficiency. With its small outline package and UL recognized standards, the BZX84C11LT1G is a top choice for engineers looking for a dependable solution. Upgrade your projects with the superior technology and value that Onsemi provides.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good protection and durability for the diode, making it reliable for long-term use.

Working Test Current: 5 mA

The working test current of 5 mA ensures safe and efficient operation of the diode within its specified parameters.

Surface Mount: YES

Being surface mountable makes it easy to integrate this diode into modern electronic circuit designs.

Maximum Voltage Tolerance: 5.45 %

The tight maximum voltage tolerance of 5.45% ensures accurate and consistent performance in voltage regulation applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this diode can withstand elevated temperatures without compromising its performance.

Maximum Dynamic Impedance: 20 ohm

The low maximum dynamic impedance of 20 ohms allows for efficient power delivery and voltage regulation in electronic circuits.

Nominal Reference Voltage: 11 V

A nominal reference voltage of 11 V makes this zener diode suitable for various voltage regulation applications.

Technical Specifications

Zener Diodes BZX84C11LT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

20 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

11 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5.45 %

Working Test Current:

5 mA

Trade Compliance

BZX84C11LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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