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TDF8590TH/N1TJ

NXP Semiconductors

TDF8590TH/N1TJ by NXP Semiconductors

NXP Semiconductors' TDF8590TH/N1TJ is a 160W audio amplifier IC with 2 channels, 27dB gain, and 10% harmonic distortion. It operates in industrial temperature range (-40 to 85°C) and supports a supply voltage range of 14-29V. Ideal for audio applications requiring high power output and low distortion levels.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,443 parts In-Stock

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Vyrian

USA . 4,073 parts In-Stock

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Anansix

USA . 1,284 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Corohmni

South Africa . 112 parts In-Stock

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$3.641

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Microchip USA

USA . 427 parts In-Stock

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$6.521

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One Stop Electronics

USA . 269 parts In-Stock

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$13.800

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AZTECH Wire

Italy . 309 parts In-Stock

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$16.100

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Ampacity Inc.

Singapore . 1,618 parts In-Stock

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$19.800

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UNI Independent Distributors

Spain . 8,247 parts In-Stock

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Continental Prestige Electronics

USA . 4,060 parts In-Stock

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Argo Parts USA

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Corphita

USA . 3,593 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Overview

Elevate your audio experience with the TDF8590TH/N1TJ by NXP Semiconductors, a top-of-the-line Audio Amplifier designed for premium sound quality. Crafted with precision and expertise, this amplifier delivers unparalleled performance and reliability, making it an ideal choice for a wide range of applications. Unlock the full potential of your audio system with 160W of power and low harmonic distortion. Trust NXP Semiconductors to bring you cutting-edge technology that enhances your listening pleasure. Elevate your sound and elevate your experience with the TDF8590TH/N1TJ.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and lightweight design, making the amplifier easy to handle and transport.

Surface Mount: YES

Surface mount capability allows for easy installation and integration into various electronic devices.

Nominal Output Power: 160 W

High nominal output power ensures strong and clear audio output for a more immersive sound experience.

Harmonic Distortion: 10 %

Low harmonic distortion ensures accurate and true-to-life sound reproduction without unwanted interference.

No. of Channels: 2

Dual channels provide stereo sound output for a more dynamic audio performance.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance even in challenging environmental conditions.

Minimum Operating Temperature: -40 °C

Wide range of operating temperatures allows for versatile use in different climates and environments.

Nominal Bandwidth: 0.02 kHz

Wide nominal bandwidth ensures compatibility with a wide range of audio frequencies for versatile use.

Technical Specifications

Audio & Video Amplifiers TDF8590TH/N1TJ attributes and parameters. Explore more Audio & Video Amplifiers devices from NXP Semiconductors

Specs

Nominal Bandwidth:

.02 kHz

General IC Type:

Gain:

27 dB

Harmonic Distortion:

10 %

JESD-30 Code:

R-PDSO-G24

Length:

15.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Power:

160 W

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

225

Maximum Seated Height:

3.5 mm

Maximum Supply Voltage (Vsup):

29 V

Minimum Supply Voltage (Vsup):

14 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1 mm

Terminal Position:

DUAL

Width:

11 mm

Trade Compliance

TDF8590TH/N1TJ General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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