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TDA8560Q/N1C,112

NXP Semiconductors

TDA8560Q/N1C,112 by NXP Semiconductors

TDA8560Q/N1C,112 by NXP Semiconductors is a 2-channel audio amplifier with 55W output power and 40dB gain. It operates in industrial temperature range (-40 to 85°C) and has a harmonic distortion of 30%. Suitable for audio applications, it features a rectangular package style with flange mount and through-hole terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 7,083 parts In-Stock

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Anansix

USA . 536 parts In-Stock

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Digiode

USA . 168 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Microchip USA

USA . 282 parts In-Stock

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$8.454

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Ampacity Inc.

Singapore . 1,066 parts In-Stock

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$11.800

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One Stop Electronics

USA . 1,085 parts In-Stock

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AZTECH Wire

Italy . 426 parts In-Stock

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$14.110

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Component Stockers USA

USA . 717 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 10,872 parts In-Stock

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UNI Independent Distributors

Spain . 3,173 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Corphita

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Overview

Elevate your audio experience with the TDA8560Q/N1C,112 by NXP Semiconductors. This high-quality audio amplifier offers impeccable sound performance and reliability, making it perfect for a wide range of applications in the audio and video industry. With a nominal output power of 55W and a harmonic distortion of only 30%, this amplifier delivers crystal-clear sound with a maximum operating temperature of 85°C. Trust in NXP Semiconductors' reputation for excellence and innovation, and enhance your audio projects with the TDA8560Q/N1C,112 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the amplifier, ensuring a longer lifespan.

Nominal Output Power: 55 W

Delivers a high power output, making it suitable for driving speakers in various audio applications.

No. of Channels: 2

Allows for stereo sound reproduction, providing a more immersive audio experience.

Harmonic Distortion: 30 %

A lower harmonic distortion value helps in creating clearer and more accurate audio output.

Nominal Bandwidth: 0.02 kHz

Provides a wide bandwidth for accurate sound reproduction across the frequency spectrum.

Gain: 40 dB

Amplifies the input signal by 40 decibels, ensuring a sufficient boost for driving speakers with clarity.

Technical Specifications

Audio & Video Amplifiers TDA8560Q/N1C,112 attributes and parameters. Explore more Audio & Video Amplifiers devices from NXP Semiconductors

Specs

Nominal Bandwidth:

.02 kHz

General IC Type:

Gain:

40 dB

Harmonic Distortion:

30 %

JESD-30 Code:

R-PZFM-T13

JESD-609 Code:

e3

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

13

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Power:

55 W

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

6 V

Surface Mount:

NO

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

ZIG-ZAG

Trade Compliance

TDA8560Q/N1C,112 General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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