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PZT2907A,135

NXP Semiconductors

PZT2907A,135 by NXP Semiconductors

NXP Semiconductors PZT2907A,135 is a PNP BJT transistor with 60V VCEO, 0.6A IC, and 200MHz fT. Ideal for switching applications with 1.5W power dissipation in a small outline package. Features Gull Wing terminals and operates up to 150°C ambient temperature.

Median Price

$0.076

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 106,100 parts In-Stock

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$0.094

106,100

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$0.094

Arrow

USA . 106,064 parts In-Stock

1+ parts

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$0.064

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$0.064

Verical

USA . 106,064 parts In-Stock

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$0.064

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106,064

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$0.064

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Rochester

USA . 64,000 parts In-Stock

1+ parts

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100+ parts

$0.089

1k+ parts

$0.074

10k+ parts

$0.066

64,000

-

$0.089

$0.074

$0.066

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,767 parts In-Stock

1+ parts

$0.069

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4,767

$0.069

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Nova Conductors

Japan . 700 parts In-Stock

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$0.111

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700

$0.111

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Chip Stock

USA . 151,000 parts In-Stock

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Vyrian

USA . 7,538 parts In-Stock

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Anansix

USA . 2,713 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 61,306 parts In-Stock

1+ parts

$0.054

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$0.054

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Semicontronic

India . 48,282 parts In-Stock

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$0.054

100+ parts

$0.053

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$0.052

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48,282

$0.054

$0.053

$0.052

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Corphita

USA . 491 parts In-Stock

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$0.066

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491

$0.066

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AZTECH Wire

Italy . 12,618 parts In-Stock

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$0.090

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Aranea Global

USA . 500 parts In-Stock

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$0.109

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$0.105

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500

$0.109

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$0.105

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Continental Prestige Electronics

USA . 5,128 parts In-Stock

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$0.111

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$0.109

5,128

$0.111

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$0.109

Argo Parts USA

USA . 2,300 parts In-Stock

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$0.111

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$0.108

2,300

$0.111

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$0.108

Component Stockers USA

USA . 20,443 parts In-Stock

1+ parts

$0.260

100+ parts

$0.080

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$0.060

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$0.060

20,443

$0.260

$0.080

$0.060

$0.060

Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$0.487

100+ parts

$0.443

1k+ parts

$0.399

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60

$0.487

$0.443

$0.399

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Aztec Data Supply Inc.

USA . 3,065 parts In-Stock

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$1.224

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$1.224

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Corohmni

South Africa . 187 parts In-Stock

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$1.800

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187

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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UNI Independent Distributors

Spain . 3,833 parts In-Stock

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ChipstoGo Electronic ltd

UK . 3,650 parts In-Stock

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Supply Digital

USA . 1,728 parts In-Stock

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Overview

Discover the power of the NXP Semiconductors PZT2907A,135 Power Bipolar Junction Transistor (BJT) - a versatile and reliable component that excels in switching applications. With a maximum collector-emitter voltage of 60V and a DC current gain of 100, this PNP transistor offers exceptional performance and efficiency. Its small outline package and gull wing terminals make it easy to integrate into various designs, while its high-quality construction ensures durability and reliability. Trust NXP Semiconductors to deliver innovative solutions for your electronic needs, and unlock new possibilities with the PZT2907A,135.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required.

Configuration: SINGLE

Simplified design for easier integration into electronic circuits.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response time.

Surface Mount: YES

Allows for easy and compact PCB assembly.

Terminal Form: GULL WING

Facilitates easier soldering and better mechanical stability.

Maximum Power Dissipation (Abs): 1.5 W

Can handle moderate power levels without overheating.

Maximum Collector-Emitter Voltage: 60 V

Suitable for circuits requiring higher voltage handling capabilities.

Maximum Collector Current (IC): 0.6 A

Capable of handling moderate current loads.

Nominal Transition Frequency (fT): 200 MHz

Offers high frequency performance suitable for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PZT2907A,135 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PZT2907A,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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