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PZT2907A,115

NXP Semiconductors

PZT2907A,115 by NXP Semiconductors

PZT2907A,115 by NXP Semiconductors is a PNP BJT transistor with 60V VCEO and 0.6A IC. It has a hFE of 100, suitable for switching applications with a max power dissipation of 1.5W at 150°C. The package is SOT-223 with Gull Wing terminals, ideal for surface mount designs.

Median Price

$0.118

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TTI

USA . 222,000 parts In-Stock

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EBV Elektronik

Germany . 171,000 parts In-Stock

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Rochester

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Verical

USA . 75,000 parts In-Stock

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Element14

Singapore . 2,282 parts In-Stock

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Arrow

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Digiode

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Nova Conductors

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Overview

Looking for a reliable Power Bipolar Junction Transistor for your switching applications? Look no further than the PZT2907A,115 by NXP Semiconductors. With a reputation for quality and innovation, NXP Semiconductors delivers top-notch products that are sure to meet your needs. The PZT2907A,115 offers a maximum collector-emitter voltage of 60V and a minimum DC current gain of 100, making it ideal for various switching tasks. Trust NXP Semiconductors to provide you with the performance and reliability you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material provides good insulation properties and epoxy offers excellent heat resistance, enhancing the durability of the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high power switching applications, making this transistor suitable for various switching tasks.

Configuration: SINGLE

Single configuration simplifies the circuit design, making it easier to integrate this transistor into different electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in a variety of switching tasks.

Surface Mount: YES

Surface mount capability allows for easy and space-saving installation on PCBs, making it suitable for compact electronic devices.

Maximum Power Dissipation (Abs): 1.5 W

High power dissipation capability ensures the transistor can handle significant power loads without overheating, increasing its reliability.

Maximum Collector-Emitter Voltage: 60 V

The high voltage rating allows the transistor to withstand substantial voltage levels, making it suitable for high voltage applications.

Maximum Collector Current (IC): 0.6 A

With a high collector current rating, this transistor can handle sizable current flows, making it ideal for applications requiring high current switching.

Nominal Transition Frequency (fT): 200 MHz

The high transition frequency enables fast switching speeds, making this transistor well-suited for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PZT2907A,115 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PZT2907A,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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