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PESD36VS1UL,315

NXP Semiconductors

PESD36VS1UL,315 by NXP Semiconductors

PESD36VS1UL,315 by NXP Semiconductors is a single transient suppression device with a max power dissipation of 150W. It has a breakdown voltage of 39V and offers unidirectional polarity. This chip carrier package is ideal for protecting electronic circuits from voltage spikes in automotive and industrial applications.

Median Price

$0.052

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 39,730 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.038

39,730

-

-

-

$0.038

Verical

USA . 39,730 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.046

39,730

-

-

-

$0.046

Chip1Stop

Japan . 14,825 parts In-Stock

1+ parts

-

100+ parts

$0.058

1k+ parts

$0.045

10k+ parts

$0.041

14,825

-

$0.058

$0.045

$0.041

Farnell

UK . 9,590 parts In-Stock

1+ parts

-

100+ parts

$0.086

1k+ parts

$0.053

10k+ parts

$0.045

9,590

-

$0.086

$0.053

$0.045

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,289 parts In-Stock

1+ parts

$0.029

100+ parts

-

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3,289

$0.029

-

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Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$0.065

100+ parts

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750

$0.065

-

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-

Chip Stock

USA . 85,000 parts In-Stock

1+ parts

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85,000

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Sensible Micro Corp

USA . 74,164 parts In-Stock

1+ parts

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74,164

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NAC Semi

USA . 70,000 parts In-Stock

1+ parts

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$0.035

70,000

-

-

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$0.035

Cyclops Electronics Ltd

UK . 25,021 parts In-Stock

1+ parts

-

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25,021

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-

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IBS Electronics

USA . 10,000 parts In-Stock

1+ parts

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$0.028

10,000

-

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$0.028

Vyrian

USA . 2,426 parts In-Stock

1+ parts

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2,426

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Anansix

USA . 871 parts In-Stock

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871

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Distributors (Availability)

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Ampacity Inc.

Singapore . 42,523 parts In-Stock

1+ parts

$0.017

100+ parts

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42,523

$0.017

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.018

100+ parts

$0.016

1k+ parts

$0.015

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-

350

$0.018

$0.016

$0.015

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Corphita

USA . 1,300 parts In-Stock

1+ parts

$0.028

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1,300

$0.028

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AZTECH Wire

Italy . 12,117 parts In-Stock

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$0.060

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12,117

$0.060

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.064

100+ parts

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1k+ parts

$0.061

10k+ parts

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2,000

$0.064

-

$0.061

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Argo Parts USA

USA . 4,444 parts In-Stock

1+ parts

$0.065

100+ parts

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1k+ parts

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10k+ parts

$0.063

4,444

$0.065

-

-

$0.063

Continental Prestige Electronics

USA . 2,710 parts In-Stock

1+ parts

$0.335

100+ parts

$0.130

1k+ parts

$0.052

10k+ parts

$0.036

2,710

$0.335

$0.130

$0.052

$0.036

Perfect Parts

USA . 314,089 parts In-Stock

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314,089

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Eastek

USA . 20,000 parts In-Stock

1+ parts

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$0.032

20,000

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$0.032

GreenTree Electronics

Israel . 10,000 parts In-Stock

1+ parts

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iodParts Technologies Inc.

India . 9,220 parts In-Stock

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9,220

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UNI Independent Distributors

Spain . 4,800 parts In-Stock

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4,800

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Supply Digital

USA . 1,381 parts In-Stock

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1,381

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Overview

Unlock the power of protection with the PESD36VS1UL,315 by NXP Semiconductors. As a leader in transient suppression devices, NXP Semiconductors delivers high-quality solutions for a wide range of applications. This single-config chip carrier offers superior performance and reliability, ensuring your electronics are safeguarded against voltage spikes. With a nominal breakdown voltage of 39V and maximum clamping voltage of 58V, this avalanche diode provides peace of mind for your valuable equipment. Trust NXP Semiconductors to keep your devices safe and secure.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making it ideal for various applications.

Config: SINGLE

Single configuration simplifies installation and reduces complexity in circuit designs.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient integration onto PCBs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 150 W

High power dissipation capacity ensures effective transient suppression in high voltage scenarios.

Nominal Breakdown Voltage: 39 V

With a specific breakdown voltage, this device effectively suppresses excess voltage and protects sensitive components.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and secure mounting within circuit systems.

No. of Terminals: 2

The two terminals provide straightforward connectivity for quick and efficient installation.

Package Style (Meter): CHIP CARRIER

Chip carrier style enhances heat dissipation and offers mechanical protection in compact form.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures reliable performance in a variety of environments.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for usage in harsh conditions without compromising functionality.

Terminal Finish: TIN

Tin finish on terminals provides corrosion resistance and ensures long-term reliability.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB layout for streamlined assembly processes.

Minimum Breakdown Voltage: 38.2 V

Reliable minimum breakdown voltage ensures consistent protection against voltage spikes.

Maximum Time At Peak Reflow Temperature (s): 30

The specified reflow time allows for accurate and efficient soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability ensures secure attachment during manufacturing processes.

Maximum Breakdown Voltage: 39.8 V

High maximum breakdown voltage guarantees effective suppression of voltage surges.

Reference Standard: AEC-Q101; IEC-60134; IEC-61000-4-5

Complies with industry standards for quality and performance assurance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode effectively clamps voltage spikes and protects sensitive electronics.

Technology: AVALANCHE

Avalanche technology ensures rapid response to transient events for enhanced protection.

Terminal Form: NO LEAD

Lead-free terminal form adheres to environmental regulations and is ideal for RoHS compliance.

Maximum Repetitive Peak Reverse Voltage: 36 V

High repetitive peak reverse voltage rating ensures consistent protection over numerous transient events.

Polarity: UNIDIRECTIONAL

Unidirectional polarity offers specific protection against voltage spikes in one direction.

Maximum Clamping Voltage: 58 V

Maximum clamping voltage limits voltage transients to a safe level, protecting downstream components.

Diode Element Material: SILICON

Silicon diode material provides reliable and consistent performance for transient suppression applications.

Technical Specifications

Transient Suppression Devices PESD36VS1UL,315 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Maximum Breakdown Voltage:

39.8 V

Minimum Breakdown Voltage:

38.2 V

Nominal Breakdown Voltage:

39 V

Maximum Clamping Voltage:

58 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

150 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-60134; IEC-61000-4-5

Maximum Repetitive Peak Reverse Voltage:

36 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PESD36VS1UL,315 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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