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PESD3V3S1UB,115

NXP Semiconductors

PESD3V3S1UB,115 by NXP Semiconductors

PESD3V3S1UB,115 by NXP Semiconductors is a single avalanche diode with a breakdown voltage of 5.6 V and max clamping voltage of 20 V. It is designed for transient suppression applications in electronics to protect against voltage spikes and surges. This surface-mount device has a max operating temperature of 150°C, making it suitable for various industrial and consumer electronic products.

Median Price

$0.034

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

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Chip1Stop

Japan . 1,236 parts In-Stock

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$0.518

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Arrow

USA . 84,000 parts In-Stock

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Verical

USA . 84,000 parts In-Stock

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Farnell

UK . 80,368 parts In-Stock

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$0.075

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$0.066

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RS (Exports)

UK . 60,000 parts In-Stock

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TTI

USA . 24,000 parts In-Stock

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EBV Elektronik

Germany . 6,000 parts In-Stock

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Rochester

USA . 750 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 4,900 parts In-Stock

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$0.024

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Nova Conductors

Japan . 28 parts In-Stock

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Freelance Electronics

USA . 28 parts In-Stock

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Maritex

Poland . 16 parts In-Stock

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NAC Semi

USA . 63,000 parts In-Stock

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Chip Stock

USA . 61,000 parts In-Stock

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Sensible Micro Corp

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Vyrian

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Bristol Electronics

USA . 5,255 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,875 parts In-Stock

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Micros sp.j. W. Kędra i J. Lic

Poland . 2,700 parts In-Stock

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$0.088

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$0.069

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Anansix

USA . 2,572 parts In-Stock

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Martec Srl

Italy . 2,275 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 724 parts In-Stock

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Connector Distribution Corp

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Right Parts Inc.

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Semi Source

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Prism Electronics

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Semicontronic

India . 161,763 parts In-Stock

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Ampacity Inc.

Singapore . 69,659 parts In-Stock

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Corphita

USA . 2,255 parts In-Stock

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Modulus Dynamics

Lithuania . 21,848 parts In-Stock

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AZTECH Wire

Italy . 12,731 parts In-Stock

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Argo Parts USA

USA . 2,957 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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Aztec Data Supply Inc.

USA . 24,618 parts In-Stock

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$0.120

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Advanced Electronics

New Zealand . 294 parts In-Stock

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Continental Prestige Electronics

USA . 159,587 parts In-Stock

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$0.466

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$0.192

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$0.101

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$0.077

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Perfect Parts

USA . 287,037 parts In-Stock

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GreenTree Electronics

Israel . 93,000 parts In-Stock

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Eastek

USA . 90,000 parts In-Stock

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Allen Electronics Distributors

USA . 60,000 parts In-Stock

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Computer Components Inc. - USA

USA . 39,000 parts In-Stock

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Robosynatics

Brazil . 30,250 parts In-Stock

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Lucentia Tech

USA . 30,250 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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iodParts Technologies Inc.

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S.R.D Solutions

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Infinite Electronics LLP (Excess)

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UNI Independent Distributors

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Cyclops Electronics Ltd (Excess)

UK . 2,663 parts In-Stock

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Formix International (Excess)

India . 2,226 parts In-Stock

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Supply Digital

USA . 2,142 parts In-Stock

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Authorized Procurement Solutions

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Corohmni

South Africa . 1,588 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,185 parts In-Stock

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Glotronic Ltd.

UK . 579 parts In-Stock

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Overview

Looking for reliable transient suppression devices? Look no further than the PESD3V3S1UB,115 by NXP Semiconductors. With a reputation for quality and innovation, NXP Semiconductors delivers top-notch products like this one. Ideal for various applications, these devices provide unparalleled protection against voltage spikes and surges. Trust in the value and benefits that NXP Semiconductors brings to the table with the PESD3V3S1UB,115, ensuring peace of mind and optimal performance for your electronic systems.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device lightweight and durable, which is ideal for portable and long-lasting applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 330 W

With a high peak power dissipation, the device can handle sudden surges of power without being damaged, ensuring reliable protection for the connected equipment.

Nominal Breakdown Voltage: 5.6 V

The nominal breakdown voltage of 5.6V indicates the point at which the device starts to conduct and suppress transient overvoltages, providing effective protection for sensitive electronics.

Technology: AVALANCHE

The use of avalanche technology allows the device to rapidly respond to overvoltage events and clamp them down to a safe level, ensuring quick and efficient protection for the connected circuitry.

Technical Specifications

Transient Suppression Devices PESD3V3S1UB,115 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Maximum Breakdown Voltage:

6 V

Minimum Breakdown Voltage:

5.2 V

Nominal Breakdown Voltage:

5.6 V

Maximum Clamping Voltage:

20 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

330 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PESD3V3S1UB,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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