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PESD1CAN-U

NXP Semiconductors

PESD1CAN-U by NXP Semiconductors

PESD1CAN-U by NXP Semiconductors is a transient suppression device with common cathode configuration and 2 elements. It has a max non-repetitive peak reverse power dissipation of 150W, making it suitable for protecting CAN bus systems in automotive applications. With a breakdown voltage range of 25.4V to 30.3V, this diode offers bidirectional protection against voltage spikes.

Median Price

$0.450

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Bristol Electronics

USA . 9,510 parts In-Stock

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$0.450

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$0.225

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$0.090

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$0.056

9,510

$0.450

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$0.056

Vyrian

USA . 8,636 parts In-Stock

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Dan-Mar Components

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ComSIT Distribution GmbH

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Greenchips

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Digiode

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Rebound Electronics

UK . 2,650 parts In-Stock

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Anansix

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Nova Conductors

Japan . 450 parts In-Stock

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Semicontronic

India . 388 parts In-Stock

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$0.010

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$0.010

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$0.010

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388

$0.010

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$0.010

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Corohmni

South Africa . 51 parts In-Stock

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$0.014

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Aztec Data Supply Inc.

USA . 285 parts In-Stock

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$0.040

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Advanced Electronics

New Zealand . 100 parts In-Stock

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One Stop Electronics

USA . 595 parts In-Stock

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$2.010

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Ampacity Inc.

Singapore . 385 parts In-Stock

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AZTECH Wire

Italy . 4,977 parts In-Stock

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Kepictronics

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Lixinc

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Perfect Parts

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Authorized Procurement Solutions

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Argo Parts USA

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Cyclops Electronics Ltd (Excess)

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Corphita

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UNI Independent Distributors

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Supply Digital

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Robosynatics

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Lucentia Tech

USA . 150 parts In-Stock

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Modulus Dynamics

Lithuania . 57 parts In-Stock

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Overview

Enhance your electronic systems with the PESD1CAN-U by NXP Semiconductors, a top-quality transient suppression device designed to protect your components from voltage spikes. With a common cathode configuration and small outline package style, this product offers reliable performance in a wide range of applications. Benefit from the industry-leading expertise of NXP Semiconductors and safeguard your equipment with the cutting-edge technology of the PESD1CAN-U. Upgrade your devices today and experience peace of mind knowing your electronics are safeguarded against unexpected power surges.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the device, ensuring a longer lifespan and reliable performance.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient transient suppression, enhancing the device's ability to handle voltage spikes.

Surface Mount: YES

Surface mount compatibility makes installation easier and saves space on the circuit board.

Maximum Non Repetitive Peak Reverse Power Dissipation: 150 W

High peak reverse power dissipation capability ensures the device can withstand sudden overvoltage conditions without damage.

Package Shape: RECTANGULAR

Rectangular package shape provides a compact design, ideal for space-constrained applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the device to function reliably in various environmental conditions.

Minimum Operating Temperature: -55 °C

Device can operate in low temperature environments without any performance issues.

Maximum Breakdown Voltage: 30.3 V

High maximum breakdown voltage ensures effective suppression of voltage spikes, protecting connected equipment.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type is specifically designed for transient suppression, providing superior protection against voltage surges.

Technology: AVALANCHE

Avalanche technology allows the device to handle high surge currents and voltage spikes efficiently, making it a reliable choice for transient suppression applications.

Technical Specifications

Transient Suppression Devices PESD1CAN-U attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Additional Features:

IEC-61643-321

Maximum Breakdown Voltage:

30.3 V

Minimum Breakdown Voltage:

25.4 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

150 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

BIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

24 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

PURE TIN

Terminal Form:

Terminal Position:

Trade Compliance

PESD1CAN-U Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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