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NZX4V7A,133

NXP Semiconductors

NZX4V7A,133 by NXP Semiconductors

NZX4V7A,133 by NXP Semiconductors is a unidirectional Zener diode with a nominal reference voltage of 4.5 V and max power dissipation of 0.5 W. It features a ceramic, glass-sealed package and operates at up to 175 °C. Ideal for voltage regulation in electronic circuits.

Median Price

$0.044

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 38,470 parts In-Stock

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$0.044

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$0.036

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$0.032

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$0.032

DigiKey

USA . 38,470 parts In-Stock

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$0.050

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Verical

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Digiode

USA . 4,140 parts In-Stock

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Chip Stock

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DigiKey Marketplace

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ACDS - Activité Composants Distribution Service

France . 10,000 parts In-Stock

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Vyrian

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Anansix

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Corphita

USA . 805 parts In-Stock

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AZTECH Wire

Italy . 10,440 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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UNI Independent Distributors

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Futuretech Components

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Overview

Elevate your designs with the NZX4V7A,133 Zener Diode from NXP Semiconductors, renowned for its exceptional quality and reliability. Crafted with precision in a robust ceramic package, this diode ensures optimal performance in diverse applications, from voltage regulation to signal clamping. Enjoy peace of mind knowing you're backed by NXP's industry-leading expertise, providing unmatched durability and efficiency that ultimately enhances the value of your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed material ensures durability and protects the diode from environmental factors.

Config: SINGLE

A single configuration simplifies integration into circuits, making it suitable for various applications.

Working Test Current: 5 mA

A low working test current indicates efficient operation at minimal power, enhancing energy conservation in designs.

Package Shape: ROUND

The round package shape allows for easy mounting and flexibility in design layouts.

No. of Terminals: 2

A dual-terminal design facilitates straightforward connections in circuit implementations.

Package Style (Meter): LONG FORM

The long form package style provides extended surface area for heat dissipation, improving thermal management.

Maximum Voltage Tolerance: 2.22 %

A tight voltage tolerance ensures reliable performance and stability in voltage regulation applications.

Maximum Operating Temperature: 175 °C

A high operating temperature rating guarantees reliability in high-temperature environments.

Maximum Dynamic Impedance: 100 ohm

Low dynamic impedance enhances the diode's response time, making it ideal for fast-switching applications.

Terminal Finish: TIN

Tin terminal finish offers good solderability and corrosion resistance, improving long-term reliability.

Terminal Position: AXIAL

The axial terminal position allows for flexible orientation in circuits, simplifying design choices.

Case Connection: ISOLATED

Isolated case connections reduce noise and interference, improving overall circuit performance.

Maximum Power Dissipation: 0.5 W

This power dissipation rating aligns well with various applications demanding efficient thermal management.

Maximum Time At Peak Reflow Temperature (s): 30

A 30-second duration at peak reflow temperature indicates compatibility with standard soldering processes.

Peak Reflow Temperature °C: 260

A high peak reflow temperature allows for robust soldering without damaging the component.

Diode Type: ZENER DIODE

As a Zener diode, it offers voltage regulation capabilities, making it essential for stabilizing circuits.

Nominal Reference Voltage: 4.5 V

A nominal reference voltage of 4.5 V is optimal for many applications requiring voltage clamping and regulation.

Technology: ZENER

Utilizing advanced Zener technology enhances reliability in providing consistent voltage regulation.

Terminal Form: WIRE

Wire terminal form provides flexibility in termination and adaptability to various mounting styles.

Polarity: UNIDIRECTIONAL

Unidirectional polarity simplifies circuit design and ensures predictable conduction characteristics.

Diode Element Material: SILICON

Silicon material ensures excellent performance, efficiency, and reliability in various environmental conditions.

Technical Specifications

Zener Diodes NZX4V7A,133 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

100 ohm

JESD-30 Code:

O-GALF-W2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

4.5 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

2.22 %

Working Test Current:

5 mA

Trade Compliance

NZX4V7A,133 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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