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NZX4V3D,143

NXP Semiconductors

NZX4V3D,143 by NXP Semiconductors

NZX4V3D,143 by NXP Semiconductors is a unidirectional Zener diode with a nominal reference voltage of 4.4 V and max power dissipation of 0.5 W. It features a ceramic, glass-sealed package and operates at up to 175 °C. Ideal for voltage regulation in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 11,378 parts In-Stock

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Digiode

USA . 3,893 parts In-Stock

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Anansix

USA . 408 parts In-Stock

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408

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One Stop Electronics

USA . 216 parts In-Stock

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$0.010

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216

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AZTECH Wire

Italy . 11,378 parts In-Stock

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$4.740

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$4.550

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$4.460

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$4.370

11,378

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$4.550

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$4.370

UNI Independent Distributors

Spain . 5,877 parts In-Stock

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Corphita

USA . 3,958 parts In-Stock

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Supply Digital

USA . 1,069 parts In-Stock

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Overview

Experience unmatched reliability with the NZX4V3D,143 Zener Diode from NXP Semiconductors. Crafted using high-quality materials and advanced technology, this diode ensures exceptional performance in voltage regulation and protection applications. Its robust ceramic and glass-sealed design withstands harsh environments, making it ideal for automotive and industrial uses. Elevate your projects with a component that combines durability, efficiency, and peace of mind—transforming challenges into opportunities!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed construction provides excellent durability and resistance to environmental factors, making this Zener diode suitable for demanding applications.

Config: SINGLE

A single configuration simplifies integration into circuits, providing straightforward implementation for various electronic designs.

Working Test Current: 5 mA

Operating at 5 mA ensures efficient performance while maintaining low power consumption, contributing to energy-efficient designs.

Package Shape: ROUND

The round shape allows for compact and flexible placement within various circuit layouts, enhancing overall design versatility.

No. of Terminals: 2

Having two terminals simplifies connections in circuit designs, making it easier for engineers to work with and integrate into existing systems.

Package Style (Meter): LONG FORM

The long form package style is beneficial for heat dissipation and can facilitate easier handling and installation in various assemblies.

Maximum Voltage Tolerance: 2.27 %

A low maximum voltage tolerance ensures reliable voltage regulation, making this Zener diode ideal for precise voltage clamping applications.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175 °C, this diode is suitable for high-temperature environments, enhancing its reliability in robust applications.

Terminal Position: AXIAL

Axial terminals confer a straightforward orientation for integration on circuit boards, aiding in compact assembly and PCB layouts.

Case Connection: ISOLATED

Isolated case connections prevent unwanted electrical interactions with surrounding components, enhancing circuit performance and reliability.

Maximum Power Dissipation: 0.5 W

A maximum power dissipation of 0.5 W allows for moderate power handling, ensuring this Zener diode can effectively regulate voltages in low to moderate power applications.

Diode Type: ZENER DIODE

As a Zener diode, it is specifically designed for voltage regulation, making it an ideal choice for protecting circuits from voltage spikes.

Nominal Reference Voltage: 4.4 V

This nominal reference voltage provides an effective voltage regulation point, making it suitable for various electronic applications requiring stable reference voltages.

Technology: ZENER

Utilizing Zener technology ensures precision in voltage clamping and regulation, making it a reliable choice for applications where voltage stability is critical.

Terminal Form: WIRE

Wire terminal form allows for easy handling and soldering, ensuring quick integration into multiple circuit configurations.

Polarity: UNIDIRECTIONAL

Being unidirectional simplifies circuit design, reducing potential errors in installation and making it easier for engineers to implement.

Diode Element Material: SILICON

Using silicon as the diode element material offers excellent electrical properties, contributing to good performance in terms of forward and reverse bias characteristics.

Technical Specifications

Zener Diodes NZX4V3D,143 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

O-GALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

4.4 V

Surface Mount:

NO

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

2.27 %

Working Test Current:

5 mA

Trade Compliance

NZX4V3D,143 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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