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NZX4V3B,133

NXP Semiconductors

NZX4V3B,133 by NXP Semiconductors

NZX4V3B,133 by NXP Semiconductors is a Zener diode with a nominal reference voltage of 4.2V and max power dissipation of 0.5W. It operates at a max temperature of 175°C and has a working test current of 5mA. This diode is commonly used in applications requiring precise voltage regulation in electronic circuits.

Median Price

$0.044

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 8,661 parts In-Stock

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$0.200

100+ parts

$0.075

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$0.055

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$0.200

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Rochester

USA . 98,990 parts In-Stock

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$0.044

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$0.036

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$0.032

98,990

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Verical

USA . 50,000 parts In-Stock

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Digiode

USA . 2,348 parts In-Stock

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Chip Stock

USA . 176,000 parts In-Stock

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Vyrian

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Anansix

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Nova Conductors

Japan . 800 parts In-Stock

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Ampacity Inc.

Singapore . 68,748 parts In-Stock

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$0.019

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Corphita

USA . 3,714 parts In-Stock

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Modulus Dynamics

Lithuania . 11,512 parts In-Stock

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$0.098

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AZTECH Wire

Italy . 11,564 parts In-Stock

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Corohmni

South Africa . 4 parts In-Stock

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Continental Prestige Electronics

USA . 98,990 parts In-Stock

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Kepictronics

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Argo Parts USA

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UNI Independent Distributors

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Supply Digital

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Futuretech Components

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Overview

Unlock the power of precision with the NZX4V3B,133 Zener Diode by NXP Semiconductors. Crafted with top-notch quality and reliability, this component offers unparalleled performance in a range of applications. With a nominal reference voltage of 4.2V and maximum voltage tolerance of 2.38%, this zener diode guarantees stability and accuracy in your circuits. Whether you're designing automotive electronics or industrial controls, trust the NZX4V3B,133 to deliver superior results every time. Experience the difference with NXP Semiconductors.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides excellent protection and reliability for the diode, ensuring a longer lifespan.

Working Test Current: 5 mA

Suitable for a wide range of applications while maintaining stable performance.

Maximum Voltage Tolerance: 2.38 %

Offers precise voltage regulation, crucial for demanding electronic circuits.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for various environments.

Maximum Dynamic Impedance: 100 ohm

Provides low impedance for efficient voltage regulation and stability.

Maximum Power Dissipation: 0.5 W

Efficiently handles power dissipation, ensuring reliability under load conditions.

Diode Type: ZENER DIODE

Specifically designed for voltage regulation applications, providing accurate voltage reference.

Nominal Reference Voltage: 4.2 V

Offers a stable voltage reference point for precise circuit operation.

Technology: ZENER

Utilizes Zener technology for reliable and accurate voltage regulation.

Technical Specifications

Zener Diodes NZX4V3B,133 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

100 ohm

JESD-30 Code:

O-GALF-W2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

4.2 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

2.38 %

Working Test Current:

5 mA

Trade Compliance

NZX4V3B,133 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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