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NZX4V3B,113

NXP Semiconductors

NZX4V3B,113 by NXP Semiconductors

NZX4V3B,113 Zener diode from NXP Semiconductors features a nominal reference voltage of 4.2 V and operates at a max temp of 175 °C. With a power dissipation of 0.5 W, it’s ideal for voltage regulation in electronic circuits. Its ceramic, glass-sealed package ensures durability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,735 parts In-Stock

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8,735

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Anansix

USA . 2,680 parts In-Stock

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2,680

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Digiode

USA . 1,583 parts In-Stock

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1,583

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One Stop Electronics

USA . 390 parts In-Stock

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$1.010

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390

$1.010

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AZTECH Wire

Italy . 8,735 parts In-Stock

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$5.930

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$5.700

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$5.580

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$5.470

8,735

$5.930

$5.700

$5.580

$5.470

UNI Independent Distributors

Spain . 2,403 parts In-Stock

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Corphita

USA . 1,704 parts In-Stock

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1,704

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Supply Digital

USA . 1,683 parts In-Stock

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Overview

Elevate your electronic designs with the NZX4V3B,113 Zener Diode from NXP Semiconductors, a trusted leader in innovative solutions. Engineered for reliability and performance, this diode ensures precise voltage regulation, making it ideal for power supply circuits, signal regulation, and protection applications. Its robust ceramic and glass-sealed package guarantees durability under extreme conditions. Experience enhanced efficiency and longevity, giving you the confidence to innovate without limits!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package ensures excellent durability and resistance to environmental factors, making this Zener diode reliable for long-term applications.

Config: SINGLE

Single configuration simplifies the circuit design, making it easier to integrate with other components in various electronic applications.

Working Test Current: 5 mA

With a working test current of 5 mA, this diode is suitable for low-power applications, providing efficiency and reducing energy consumption.

Package Shape: ROUND

The round package shape is ideal for compact designs, allowing flexibility in placement within thermal and spatial constraints of electronic devices.

No. of Terminals: 2

Having two terminals facilitates easy connection and integration into circuits, providing simplicity and effectiveness in design.

Package Style (Meter): LONG FORM

The long-form package style enhances thermal management, improving performance in applications that require stable operation at varying temperatures.

Maximum Voltage Tolerance: 2.38 %

The low maximum voltage tolerance indicates high precision in voltage regulation, crucial for stabilizing circuits and protecting sensitive components.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature allows this diode to function reliably in extreme conditions, making it a robust choice for industrial applications.

Terminal Position: AXIAL

Axial terminal positioning simplifies direct mounting on printed circuit boards (PCBs), enhancing assembly efficiency in manufacturing processes.

Case Connection: ISOLATED

The isolated case connection reduces the risk of short circuits, increasing safety and reliability in various electronic applications.

Maximum Power Dissipation: 0.5 W

With a maximum power dissipation of 0.5 W, this diode is capable of handling moderate loads, making it suitable for a range of applications without overheating.

Diode Type: ZENER DIODE

As a Zener diode, it is designed specifically for voltage regulation, providing stable reference voltages in power supply circuits.

Nominal Reference Voltage: 4.2 V

The nominal reference voltage of 4.2 V is ideal for power supply applications, ensuring reliability in voltage regulation and circuit protection.

Technology: ZENER

Utilizing Zener technology enhances voltage stability, making it an excellent choice for sensitive electronic applications requiring precise voltage references.

Terminal Form: WIRE

Wire terminal form provides flexibility in connection methods, accommodating various designs and installation techniques.

Polarity: UNIDIRECTIONAL

Unidirectional polarity makes it suitable for specific applications where current needs to flow in a single direction, ensuring proper operation.

Diode Element Material: SILICON

The use of silicon for the diode element offers excellent electrical properties, enhancing performance and reliability in electronic applications.

Technical Specifications

Zener Diodes NZX4V3B,113 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

O-GALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

4.2 V

Surface Mount:

NO

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

2.38 %

Working Test Current:

5 mA

Trade Compliance

NZX4V3B,113 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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