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IP4286CZ6-TBF,115

NXP Semiconductors

IP4286CZ6-TBF,115 by NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Nominal Breakdown Voltage: 7.5 V; Terminal Finish: Tin (Sn); JESD-609 Code: e3;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 12,486 parts In-Stock

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12,486

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Anansix

USA . 2,247 parts In-Stock

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2,247

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Digiode

USA . 86 parts In-Stock

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86

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 739 parts In-Stock

1+ parts

$1.010

100+ parts

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739

$1.010

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AZTECH Wire

Italy . 137 parts In-Stock

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$13.770

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137

$13.770

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Corphita

USA . 2,059 parts In-Stock

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2,059

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UNI Independent Distributors

Spain . 2,032 parts In-Stock

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2,032

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Technical Specifications

Transient Suppression Devices IP4286CZ6-TBF,115 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Nominal Breakdown Voltage:

7.5 V

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Polarity:

UNIDIRECTIONAL

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Trade Compliance

IP4286CZ6-TBF,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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