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IP4220CZ6

NXP Semiconductors

IP4220CZ6 by NXP Semiconductors

The NXP Semiconductors IP4220CZ6 is a Zener diode with 7.5V breakdown voltage, ideal for transient suppression applications. It comes in a small outline package with 6 terminals and can handle peak reflow temperatures up to 260°C. The unidirectional diode has a min breakdown voltage of 6V and max of 9V, making it suitable for protecting electronic circuits from voltage spikes.

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Cyclops Electronics Ltd

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Ampacity Inc.

Singapore . 1,318 parts In-Stock

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Overview

Enhance your electronic devices with the top-quality IP4220CZ6 from NXP Semiconductors. This single transient suppression device offers unparalleled protection and reliability, thanks to its advanced technology and durable construction. Ideal for a wide range of applications, this product ensures optimal performance and peace of mind for customers seeking superior quality in their components. Upgrade your devices today with the IP4220CZ6 and experience the difference in protection and functionality it provides.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection to the internal components, ensuring a longer lifespan for the device.

Config: SINGLE

Single configuration simplifies installation and reduces complexity in circuit design, making it easier to integrate into existing systems.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards, saving time and effort during manufacturing processes.

Nominal Breakdown Voltage: 7.5 V

The specific nominal breakdown voltage of 7.5 V ensures reliable protection against voltage spikes, making it suitable for a variety of applications.

Package Shape: RECTANGULAR

Rectangular shape provides a compact and space-efficient design, allowing for versatile placement within electronic devices.

No. of Terminals: 6

Having 6 terminals allows for a secure and stable connection to the circuit, enhancing the overall performance and reliability of the device.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and makes the device suitable for applications where size constraints are a concern.

Terminal Finish: Tin (Sn)

Tin terminal finish ensures good conductivity and solderability, facilitating the assembly process and improving the electrical performance of the device.

Terminal Position: DUAL

Dual terminal position allows for flexibility in connection options, offering versatility in circuit design and installation.

Minimum Breakdown Voltage: 6 V

Having a minimum breakdown voltage of 6 V ensures protection against lower voltage surges, making the device suitable for a wide range of applications.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, the device can withstand soldering processes without compromising its performance or reliability.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures the device can withstand high-temperature soldering processes, making it suitable for use in various manufacturing environments.

Maximum Breakdown Voltage: 9 V

The maximum breakdown voltage of 9 V provides a higher level of protection against voltage spikes, making the device reliable in demanding applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type offers efficient voltage regulation and transient suppression, safeguarding sensitive electronic components from voltage spikes.

Technology: ZENER

Zener technology ensures precise voltage regulation and protection, making the device ideal for applications requiring stable voltage levels and surge protection.

Terminal Form: GULL WING

Gull wing terminal form allows for easy and secure mounting on the circuit board, enhancing the reliability and longevity of the device.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that voltage spikes are efficiently suppressed in one direction, providing effective protection to downstream components in the circuit.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability in voltage regulation and suppression, making the device a durable and long-lasting choice.

Technical Specifications

Transient Suppression Devices IP4220CZ6 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Maximum Breakdown Voltage:

9 V

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

7.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

IP4220CZ6 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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